Silicon electro-optic modulator with high-permittivity gate dielectric layer

Mengxia Zhu; Zhiping Zhou; Dingshan Gao

doi:10.3788/COL20090710.0924

Journals >Chinese Optics Letters >Volume 7 >Issue 10 >Page 924 > Article

Chinese Optics Letters
Vol. 7, Issue 10, 924 (2009)

Silicon electro-optic modulator with high-permittivity gate dielectric layer

Mengxia Zhu¹, Zhiping Zhou^2、3, and Dingshan Gao¹

Author Affiliations

¹Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

²State Key Laboratory on Advanced Optical Communication Systems and Networks, Peking University, Beijing 100871, China

³School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

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DOI: 10.3788/COL20090710.0924 Cite this Article Set citation alerts

Mengxia Zhu, Zhiping Zhou, Dingshan Gao. Silicon electro-optic modulator with high-permittivity gate dielectric layer[J]. Chinese Optics Letters, 2009, 7(10): 924 Copy Citation Text

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Abstract

A high-permittivity (high-k) material is applied as the gate dielectric layer in a silicon metal-oxide-semiconductor (MOS) capacitor to form a special electro-optic (EO) modulator. Both induced charge density and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material. The device has an ultra-compact dimension of 691 \mu m in length.

Keywords

230.2090 230.4110 250.4110 250.6715

Mengxia Zhu, Zhiping Zhou, Dingshan Gao. Silicon electro-optic modulator with high-permittivity gate dielectric layer[J]. Chinese Optics Letters, 2009, 7(10): 924

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