Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides

Kai-li LI; Jia-shun ZHANG; Jun-ming AN; Jian-guang LI; Liang-liang WANG; Yue WANG; Yuan-da WU; Xiao-jie YIN; Xiong-wei HU

doi:10.1007/s11801-017-7076-8

Journals >Optoelectronics Letters >Volume 13 >Issue 4 >Page 241 > Article

Optoelectronics Letters
Vol. 13, Issue 4, 241 (2017)

Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides

Kai-li LI^1、2, Jia-shun ZHANG^1、*, Jun-ming AN^1、2, Jian-guang LI¹, Liang-liang WANG¹, Yue WANG¹, Yuan-da WU^1、2, Xiao-jie YIN¹, and Xiong-wei HU¹

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China

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DOI: 10.1007/s11801-017-7076-8 Cite this Article

LI Kai-li, ZHANG Jia-shun, AN Jun-ming, LI Jian-guang, WANG Liang-liang, WANG Yue, WU Yuan-da, YIN Xiao-jie, HU Xiong-wei. Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides[J]. Optoelectronics Letters, 2017, 13(4): 241 Copy Citation Text

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Abstract

A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of ?13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon- on-insulator (SOI) substrate.

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