• Chinese Optics Letters
  • Vol. 9, Issue 9, 091602 (2011)
Yuchong Ding1、2, Guangjun Zhao1, Yosuke Nakai3, and Taiju Tsuboi3
Author Affiliations
  • 1Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Graduate University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Faculty of Engineering, Kyoto Sangyo University, Kamigamo, Kita-ku, Kyoto 603-8555, Japan
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    DOI: 10.3788/col201109.091602 Cite this Article Set citation alerts
    Yuchong Ding, Guangjun Zhao, Yosuke Nakai, Taiju Tsuboi. Temperature effect on emission spectra and fluorescence lifetime of the 4I13=2 state of Er3+-doped Gd2SiO5 crystal[J]. Chinese Optics Letters, 2011, 9(9): 091602 Copy Citation Text show less

    Abstract

    By measuring the emission spectra and the fluorescence lifetime of the 4I13=2 state of Er3+ ions in Gd2SiO5 crystal at different temperatures, the effects of temperature on the spectra and the lifetime of the 4I13=2 state are investigated. When the temperature increases, the emission line width for the 4I13=2 -> 4I15=2 transition is broadened, and the main emission lines at 1 596, 1 609, and 1 644 nm shifte toward shorter wavelengths. The measured lifetime of the 4I13=2 state decreases from 13.2 to 8.4 ms with temperature increase from 13 to 300 K, which is mainly due to the temperature dependence of multiphonon relaxation between the 4I13=2 and 4I15=2 states and the changing population distribution among the Stark levels within the 4I13=2 state. The experimental results imply that low temperature condition is better for the ~1.6- \mu m laser output.
    Yuchong Ding, Guangjun Zhao, Yosuke Nakai, Taiju Tsuboi. Temperature effect on emission spectra and fluorescence lifetime of the 4I13=2 state of Er3+-doped Gd2SiO5 crystal[J]. Chinese Optics Letters, 2011, 9(9): 091602
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