Optimal quantum well width and the effect of quantum well position on the performance of transistor lasers

Habib Md. Ahsan; Das Subrata; Ullah Saeed Mahmud; Rafique Shahida

doi:10.1007/s11801-013-2313-2

Journals >Optoelectronics Letters >Volume 9 >Issue 1 >Page 18 > Article

Optoelectronics Letters
Vol. 9, Issue 1, 18 (2013)

Optimal quantum well width and the effect of quantum well position on the performance of transistor lasers

Habib Md. Ahsan^1、*, Das Subrata², Ullah Saeed Mahmud², and Rafique Shahida²

Author Affiliations

¹Department of Electronics and Communication Engineering, University of Information Technology and Sciences, Dhaka 1212, Bangladesh

²Department of Applied Physics, Electronics and Communication Engineering University of Dhaka, Dhaka 1000, Bangladesh

show less

DOI: 10.1007/s11801-013-2313-2 Cite this Article

Md. Ahsan Habib, Subrata Das, Saeed Mahmud Ullah, Shahida Rafique. Optimal quantum well width and the effect of quantum well position on the performance of transistor lasers[J]. Optoelectronics Letters, 2013, 9(1): 18 Copy Citation Text

show less

Abstract

Transistor laser (TL) model based on InGaP/GaAs/InGaAs/GaAs is analyzed and presented. It is realized that quantum well (QW) with width of 10 nm may be formed for low base threshold current density Jth. The emission wavelength is found to be 1.05 μm, and the indium (In) composition is 0.25 for optimal QW width. It is identified that Jth decreases with the movement of QW towards the base-emitter (B-E) interface. Small signal optical response is calculated, and the effect of QW position is studied. The bandwidth is enhanced due to the movement of the QW towards the emitter base junction.

Download Citation

Save the article for my favorites

Paper Information