• Acta Photonica Sinica
  • Vol. 41, Issue 9, 1086 (2012)
YU Shihui1、2、*, DING Linghong1、2, XUE Chuang1、2, and ZHANG Weifeng1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/gzxb20124109.1086 Cite this Article
    YU Shihui, DING Linghong, XUE Chuang, ZHANG Weifeng. Influence of O2/Ar Ratio on the Properties of Transparent Conductive SnO2/Ag/SnO2 Trilayer Film[J]. Acta Photonica Sinica, 2012, 41(9): 1086 Copy Citation Text show less

    Abstract

    SnO2/Ag/SnO2 trilayer thin films were prepared on glass substrates by RF magnetron sputtering of SnO2 with different O2/Ar ratio and DC magnetron sputtering of Ag. Several analytical tools such as Hall measurements, fourpoint probe and ultravioletvisiblenear infrared (UVVisNIR) spectrophotometer were used to explore the causes of the changes in electrical and optical properties. When O2/Ar ratio is 1∶14, the film had a figure of merit of 1.69×10-2 Ω-1, the resistivity is 9.8×10-5 Ω·cm, and the sheet resistance is 9.68Ω/sq, while the average transmittance is still as high as 85% in the visible light region. In addition, when O2/Ar ratio is 1: 14, The flexible SnO2/Ag/SnO2 trilayer thin films with excellent photoelectric performance can be obtained by magnetron sputtering on PET substrates, the average transmittance is above 85%, the resistivity is 1.22×10-4 Ω·cm, and the sheet resistance is 12.05 Ω/sq.
    YU Shihui, DING Linghong, XUE Chuang, ZHANG Weifeng. Influence of O2/Ar Ratio on the Properties of Transparent Conductive SnO2/Ag/SnO2 Trilayer Film[J]. Acta Photonica Sinica, 2012, 41(9): 1086
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