• Optoelectronics Letters
  • Vol. 11, Issue 3, 199 (2015)
Qi-nan LI1、*, Bin ZHAO2, Tao ZHANG1, Rei LI1, Xiang-mei LIU1, Ya-hui ZHENG1, and Xiao-jun LIU1
Author Affiliations
  • 1Department of Physics, College of Science, Qiqihar University, Qiqihar 161006, China
  • 2College of Chemistry, Fuzhou University, Fuzhou 350108, China
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    DOI: 10.1007/s11801-015-5057-3 Cite this Article
    LI Qi-nan, ZHAO Bin, ZHANG Tao, LI Rei, LIU Xiang-mei, ZHENG Ya-hui, LIU Xiao-jun. Continuous wave and passively Q-switched Nd:Lu0.15-Y0.85VO4laser with 885 nm direct pumping[J]. Optoelectronics Letters, 2015, 11(3): 199 Copy Citation Text show less

    Abstract

    The 885 nm direct pumping directly into the 4F3/2emitting level of Nd3+is applied on an Nd:Lu0.15-Y0.85VO4crystal. The maximum output power of 2.8 W for continuous wave (CW) operation is obtained. For Q-switched operation, the maximum average output power is 1.2 W with pulse repetition of 23.69 kHz and pulse width of 35 ns at the pump power of 27.9 W. The high-quality fundamental transverse mode can be observed owing to the reduction of thermal effect for Nd:Lu0.15-Y0.85VO4crystal by 885 nm direct pumping.
    LI Qi-nan, ZHAO Bin, ZHANG Tao, LI Rei, LIU Xiang-mei, ZHENG Ya-hui, LIU Xiao-jun. Continuous wave and passively Q-switched Nd:Lu0.15-Y0.85VO4laser with 885 nm direct pumping[J]. Optoelectronics Letters, 2015, 11(3): 199
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