• Chinese Optics Letters
  • Vol. 7, Issue 5, 05413 (2009)
Zhaoqi Fan1, Chuanhui Cheng1、2, Shukun Yu2, Kaiqi Ye, Daocheng Xia1, Qinglong Bai1, Hesong Guan2, and Guotong Du1、2
Author Affiliations
  • 1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, China2 State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China3 Key Lab of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, ChinaE-mail: zhaoqijlu@yahoo.com.cn
  • 2E-mail: dugt@dlut.edu.cn
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    DOI: 10.3788/COL20090705.0413 Cite this Article Set citation alerts
    Zhaoqi Fan, Chuanhui Cheng, Shukun Yu, Kaiqi Ye, Daocheng Xia, Qinglong Bai, Hesong Guan, Guotong Du. Near-infrared electroluminescent diodes based on copper hexadecafluorophthalocyanine CuPcF16[J]. Chinese Optics Letters, 2009, 7(5): 05413 Copy Citation Text show less

    Abstract

    We demonstrate the near-infrared (NIR) organic light-emitting devices (OLEDs) based on copper hexadecafluorophthalocyanine (CuPcF16 doped into 2,2,2”-(1,3,5-benzenetriyl)tris-[1-phenyl-1H-benzimidazole] (TPBI). The device structure is ITO/ NPB/ TPBI:CuPcF16/BCP/Alq3/Al. Room-temperature electroluminescence is observed at about 1106 nm due to transitions from the first excited triplet state to the ground state (T1-S0) of CuPcF16. The result indicates that Forster and Dexter energy transfers play a minor role in these devices, while the direct charge trapping is the dominant mechanism. The absorption spectra of CuPcF16 solution in pyridine and vacuum sublimed films on quartz have also been investigated.
    Zhaoqi Fan, Chuanhui Cheng, Shukun Yu, Kaiqi Ye, Daocheng Xia, Qinglong Bai, Hesong Guan, Guotong Du. Near-infrared electroluminescent diodes based on copper hexadecafluorophthalocyanine CuPcF16[J]. Chinese Optics Letters, 2009, 7(5): 05413
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