• Acta Photonica Sinica
  • Vol. 46, Issue 3, 331001 (2017)
MA Hua-li1、*, YANG Xiao-hui2, ZENG Fan-guang1, XIA Lian-sheng3, CHEN Yi3, and ZHANG Huang3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/gzxb20174603.0331001 Cite this Article
    MA Hua-li, YANG Xiao-hui, ZENG Fan-guang, XIA Lian-sheng, CHEN Yi, ZHANG Huang. Influence of Ni/Au Buffer Layer on Intense Pulsed Emission Stability of Carbon Nanotubes[J]. Acta Photonica Sinica, 2017, 46(3): 331001 Copy Citation Text show less

    Abstract

    Carbon Nanotube (CNT) film was grew on a Ni/Au buffered Si wafer by the pyrolysis of iron phthalocyanine(FePc). The intense pulsed emission stability of as-prepared CNT film was studied by measuring the intense pulsed emission characteristics repeatedly with diode configuration under the same voltage of Marx generator. The results show that, at the peak values of pulsed voltage ranging from 1.60 MV to 1.74 MV (the corresponding electric field intensity range of 11.43~12.43 V/μm), the peak current of the first emission cycle reaches to 331.2 A. The Ni/Au composite buffer layer can not only improve the emission current, but also the emission stability of as-prepared CNT film. When the number of emission cycles is up to 7 times for cold cathodes, the current of the Ni/Au-CNT cathode is 72% for the first current point, and while the Ni-CNT cathode and Si-CNT cathode is 62% and 32%, respectively.
    MA Hua-li, YANG Xiao-hui, ZENG Fan-guang, XIA Lian-sheng, CHEN Yi, ZHANG Huang. Influence of Ni/Au Buffer Layer on Intense Pulsed Emission Stability of Carbon Nanotubes[J]. Acta Photonica Sinica, 2017, 46(3): 331001
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