• Optoelectronics Letters
  • Vol. 11, Issue 2, 121 (2015)
Fu ZHENG1、2, Ge ZHU1、3, Xue-feng LIU1, Chao WANG1、3, Zhi-bin SUN1, and Guang-jie ZHAI1、*
Author Affiliations
  • 1Key Laboratory of Electronics and Information Technology for Space Systems, Center for Space Sciences and Applied Research, Chinese Academy of Sciences, Beijing 100190, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3College of Physics, Beijing Institute of Technology, Beijing 100081, China
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    DOI: 10.1007/s11801-015-4213-0 Cite this Article
    ZHENG Fu, ZHU Ge, LIU Xue-feng, WANG Chao, SUN Zhi-bin, ZHAI Guang-jie. Double balanced differential configuration for high speed InGaAs/InP single photon detector at telecommunication wavelengths[J]. Optoelectronics Letters, 2015, 11(2): 121 Copy Citation Text show less

    Abstract

    In this paper, we present an innovative method of double balanced differential configuration, in which two adjacent single photon avalanche diodes (SPADs) from the same wafer are configured as the first balanced structure, and the output signal from the first balanced stage is subtracted by the attenuated gate driving signal as the second balanced stage. The compact device is cooled down to 236 K to be characterized. At a gate repetition rate of 400 MHz and a 1 550 nm laser repetition rate of 10 MHz, the maximum photon detection efficiency of 13.5% can be achieved. The dark count rate is about 10-4ns-1at photon detection efficiency of 10%. The afterpulsing probability decreases with time exponentially. It is shown that this configuration is effective to discriminate the ultra-weak avalanche signal in high speed gating rates.
    ZHENG Fu, ZHU Ge, LIU Xue-feng, WANG Chao, SUN Zhi-bin, ZHAI Guang-jie. Double balanced differential configuration for high speed InGaAs/InP single photon detector at telecommunication wavelengths[J]. Optoelectronics Letters, 2015, 11(2): 121
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