Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD). DEZn, O2, and P2 O5 powders are used as reactant and dopant sources. The ptype ZnO films are grown at a temperature between 673 K and 723 K. The best p-type sample has a low resistivity of 4.64 V?cm, a hole concentration of 1.6161018 cm23, and a Hall mobility of 0.838 cm2?(V?s)21 at room temperature. A strong emission peak at 3.354 eV corresponding to neutral acceptor bound excitons is observed at 77 K in the photoluminescence spectra, which further verifies the ptype characteristics of the films.