• Chinese Optics Letters
  • Vol. 9, Issue 7, 071601 (2011)
Jindong Wu1、2, Danping Chen3, Xingkun Wu1, and Jianrong Qiu4
Author Affiliations
  • 1State Key Laboratory of Modern Instruments, Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China
  • 2Zhejiang Futong Optical Fiber Technology Corp. Ltd., Fuyang 311422, China
  • 3Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 4State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
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    DOI: 10.3788/COL201109.071601 Cite this Article Set citation alerts
    Jindong Wu, Danping Chen, Xingkun Wu, Jianrong Qiu. Ultra-broad near-infrared emission of Bi-doped SiO2 Al2O3 GeO2 optical fibers[J]. Chinese Optics Letters, 2011, 9(7): 071601 Copy Citation Text show less

    Abstract

    Bi-doped SiO2–Al2O3–GeO2 fiber preforms are prepared by modified chemical vapor deposition (MCVD) and solution doping process. The characteristic spectra of the preforms and fibers are experimentally investigated, and a distinct difference in emission between the two is observed. Under 808-nm excitation, an ultra-broad near-infrared (NIR) emission with full-width at half-maximum (FWHM) of 495 nm is observed in the Bi-doped fiber. This observation, to our knowledge, is the first in this field. The NIR emission consists of two bands, which may be ascribed to the Bi0 and Bi+ species, respectively. This Bi-doped fiber is promising for broadband optical amplification and widely tunable laser.
    Jindong Wu, Danping Chen, Xingkun Wu, Jianrong Qiu. Ultra-broad near-infrared emission of Bi-doped SiO2 Al2O3 GeO2 optical fibers[J]. Chinese Optics Letters, 2011, 9(7): 071601
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