• Acta Photonica Sinica
  • Vol. 47, Issue 7, 723001 (2018)
WANG Yuan-cheng*, LI Jian-jun, WANG Hai-kuo, WANG Meng-huan, YUAN Ze-xu, and ZOU De-shu
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/gzxb20184707.0723001 Cite this Article
    WANG Yuan-cheng, LI Jian-jun, WANG Hai-kuo, WANG Meng-huan, YUAN Ze-xu, ZOU De-shu. Micro Current High Efficiency 650 nm Resonant Cavity Light Emitting Diode[J]. Acta Photonica Sinica, 2018, 47(7): 723001 Copy Citation Text show less

    Abstract

    Based on the micro cavity theory and the film optical transmission matrix model, the resonant cavity light emitting diodes with different aperturehave been designed and fabricated. Through the design of epitaxial structure as well as the preparation and testing of devices, in this paper, the effects of microcavity structure, cavity spectrum detuning and effective radiation area on the luminous efficiency, peak wavelength and full width of the half wave were investigated in detail. In the end, the bright current of the device is reduced and the external quantum efficiency of the device is improved. The device can produce visible light intensity at the 100 μA bias current. At 1mA current, the power is 0.16 mW and the external quantum efficiency is 7%. The peak wavelength of the device is 650 nm, which had not changed with the current in the range of 0.1~7 mA. The far-field distribution is circular spot with uniform symmetry, and the horizontal and vertical divergence angles are 46° and 48° respectively. Compared with ordinary light emitting diode, the device has higher luminous efficiency and better monochromaticity, directivity, wavelength stability. This research has provided devices for realizing high current luminescent driven by micro current, and provided references for the research of the photoelectric characteristics of resonant cavity light emitting diodes under micro current.
    WANG Yuan-cheng, LI Jian-jun, WANG Hai-kuo, WANG Meng-huan, YUAN Ze-xu, ZOU De-shu. Micro Current High Efficiency 650 nm Resonant Cavity Light Emitting Diode[J]. Acta Photonica Sinica, 2018, 47(7): 723001
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