Type-Ⅱ InAs/GaSb superlattices materials were grown on (100) GaSb substrate in a horizontal quartz reactor by a home-made low pressure metal organic chemical vapor deposition (LP-MOCVD).Growth surface structures and morphologies were characterized by means of double crystal X-ray diffraction (DCXRD),atomic force microscopy (AFM) and photo-luminescence (PL).High quality mirror-like surfaces type-Ⅱ InAs/GaSb superlattices materials were obtained.Photoluminescence results show that the peak wavelength of the type-Ⅱ InAs/GaSb superlattices at 77 K is 3.25 μm.The effects of growth temperature,buffer layer and interfacial layer for surface morphology were discussed.The condition that growth temperature in 500 ℃~520 ℃,without buffer layer and InAsSb interfacial layer can improve the surface morphology of the material.