The Effect of ion Current Density in ion Beam Assisted Deposition

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 34 >Issue 3 >Page 477 > Article

Acta Photonica Sinica
Vol. 34, Issue 3, 477 (2005)

The Effect of ion Current Density in ion Beam Assisted Deposition

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Effect of ion Current Density in ion Beam Assisted Deposition[J]. Acta Photonica Sinica, 2005, 34(3): 477 Copy Citation Text

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Abstract

The ion current density (ICD) of End-Hall ion source at different conditions were determined with a Frady cup. The ZrO_2 films were deposited with different Ar+ ICD. The influence of ICD on refractive index, crystal phases, index inhomogeneity of films was studied. The effect of ICD on refractive index was analysed by a momentum transfer model. According to a thermal-spike theory, it is evidenced that the ICD didn′t influence the crystal structure of the films.

Keywords

Crystal phase Ion current density Thermal-spike Ion beam assisted

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Effect of ion Current Density in ion Beam Assisted Deposition[J]. Acta Photonica Sinica, 2005, 34(3): 477

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