• Optoelectronics Letters
  • Vol. 14, Issue 5, 359 (2018)
Fei-fei XIN*
Author Affiliations
  • College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, China
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    DOI: 10.1007/s11801-018-8034-9 Cite this Article
    XIN Fei-fei. Mechanism of the UV band-edge photorefractivity en-hancement in near-stoichiometric LiNbO3[J]. Optoelectronics Letters, 2018, 14(5): 359 Copy Citation Text show less

    Abstract

    The UV photorefractive properties of near-stoichiometric LiNbO3 single crystal are found to be significantly enhanced com-pared with the congruent one at 325 nm. The temperature dependence of the band edge of near-stoichiometric LiNbO3 crystal is investigated. Significant thermal-induced spectral shift in band gap which obeys the Bose-Einstein expression is observed, and the fundamental band gap at zero absolute temperature is found to be much larger than the congruent one. New absorp-tion bands near the UV band edge which are much stronger in the near-stoichiometric LiNbO3 than those in the congruent LiNbO3 crystal show up at temperatures lower than ~400 K. Note that the UV photorefractivity is enhanced in SLN, which has exactly the same tendency as the absorption strength.
    XIN Fei-fei. Mechanism of the UV band-edge photorefractivity en-hancement in near-stoichiometric LiNbO3[J]. Optoelectronics Letters, 2018, 14(5): 359
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