• Journal of Atmospheric and Environmental Optics
  • Vol. 4, Issue 6, 469 (2009)
Cheng-yin SHEN*, Xiao-qin XI, Qiao-ling DENG, and Yan-nan CHU
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article
    SHEN Cheng-yin, XI Xiao-qin, DENG Qiao-ling, CHU Yan-nan. Performance Characteristics of Novel Porous Silicon at Ambient Condition[J]. Journal of Atmospheric and Environmental Optics, 2009, 4(6): 469 Copy Citation Text show less

    Abstract

    For the development of the ionizer with low discharge voltage and the photounit at ambient condition, a novel porous silicon(PS) fabricated by combining the electrochemical anodization in HF solution under light with hydrothermally iron-passivated is introduced. The characteristics of electron emission and photo-electricity response at ambient condition were studied. The results show that this PS can emit electrons steadily for 2[EQUATION]3 min, and there is positive output voltage ([EQUATION] 120 mV) in the dark and the negative output voltage ([EQUATION]30 mV) under illumination. This indicates that the novel PS holds a potential to be exploited as the ionizer with low discharge voltage and the special photounit at ambient condition.
    SHEN Cheng-yin, XI Xiao-qin, DENG Qiao-ling, CHU Yan-nan. Performance Characteristics of Novel Porous Silicon at Ambient Condition[J]. Journal of Atmospheric and Environmental Optics, 2009, 4(6): 469
    Download Citation