• Optoelectronics Letters
  • Vol. 11, Issue 5, 386 (2015)
Ying ZHANG*, Chao HAN, and Eerdunchaolu
Author Affiliations
  • Department of Physics, Hebei Normal University of Science and Technology, Qinhuangdao 066004, China
  • show less
    DOI: 10.1007/s11801-015-5135-6 Cite this Article
    ZHANG Ying, HAN Chao, Eerdunchaolu. Characteristics of strong-coupling bipolaron qubit in two-dimensional quantum dot in electric field[J]. Optoelectronics Letters, 2015, 11(5): 386 Copy Citation Text show less

    Abstract

    Based on Lee-Low-Pines (LLP) unitary transformation, this article adopts the variational method of the Pekar type and gets the energy and wave functions of the ground state and the first excited state of strong-coupling bipolaron in two-dimensional quantum dot in electric field, thus constructs a bipolaron qubit. The numerical results represent that the time oscillation period T0 of probability density of the two electrons in qubit decreases with the increasing electric field intensity F and dielectric constant ratio of the medium η; the probability density Q of the two electrons in qubit oscillates periodically with the increasing time t; the probability of electron appearing near the center of the quantum dot is larger, while that appearing away from the center of the quantum dot is much smaller.
    ZHANG Ying, HAN Chao, Eerdunchaolu. Characteristics of strong-coupling bipolaron qubit in two-dimensional quantum dot in electric field[J]. Optoelectronics Letters, 2015, 11(5): 386
    Download Citation