Measurement of the Photon Emission Characteristic of Silicon Avalanche Photodiode

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 34 >Issue 3 >Page 354 > Article

Acta Photonica Sinica
Vol. 34, Issue 3, 354 (2005)

Measurement of the Photon Emission Characteristic of Silicon Avalanche Photodiode

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measurement of the Photon Emission Characteristic of Silicon Avalanche Photodiode[J]. Acta Photonica Sinica, 2005, 34(3): 354 Copy Citation Text

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Abstract

The temporal and photo-statistic characteristics of silicon APD photon emission were got experimentally by measuring its photon statistics under breakdown condition. Compared with corresponding Poisson distribution and thermal field photon statistic distribution, the photo-statistic distribution of APD photon emission with 10 ms bin time was found to be Super-Poisson distribution. The fluorescence spectrum of the APD photon emission was also achieved in experiment.

Keywords

Photon emission Photo-statistics spectrum Avalanche Photodiode

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