• Optoelectronics Letters
  • Vol. 10, Issue 5, 332 (2014)
Yong-liang LI*, Xiu-fei LI, Hong-wei HU, Xiao-quan HAI, Yang LIU, and Jin-nan WANG
Author Affiliations
  • School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
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    DOI: 10.1007/s11801-014-4048-0 Cite this Article
    LI Yong-liang, LI Xiu-fei, HU Hong-wei, HAI Xiao-quan, LIU Yang, WANG Jin-nan. A green laser at 517 nm based on intracavity frequency doubling of the diode-pumped Yb:LO laser[J]. Optoelectronics Letters, 2014, 10(5): 332 Copy Citation Text show less

    Abstract

    We report for the first time, to our knowledge, the diode-pumped continuous-wave (CW) thin-disk Yb3+-doped Lu2O3 (Yb:LO) laser at 1 034 nm and the second-harmonic generation at 517 nm. With a 6.3% output coupler, the maximum output power is 1.17 W under a pump power of 18.5 W. Moreover, the intracavity second-harmonic generation (SHG) is also achieved with power of 193 mW at 517 nm by using an LiB3O5 (LBO) nonlinear crystal. The beam quality factor M2 is about 1.28. The fluctuation of the output power is about 3% in 1 h.
    LI Yong-liang, LI Xiu-fei, HU Hong-wei, HAI Xiao-quan, LIU Yang, WANG Jin-nan. A green laser at 517 nm based on intracavity frequency doubling of the diode-pumped Yb:LO laser[J]. Optoelectronics Letters, 2014, 10(5): 332
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