• Photonics Research
  • Vol. 8, Issue 3, 412 (2020)
Wei Zheng1, Ruisheng Zheng2、4, Feng Huang1、*, Honglei Wu2, and Fadi Li3
Author Affiliations
  • 1State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China
  • 2Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China
  • 3Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
  • 4e-mail: rszheng@szu.edu.cn
  • show less
    DOI: 10.1364/PRJ.388479 Cite this Article Set citation alerts
    Wei Zheng, Ruisheng Zheng, Feng Huang, Honglei Wu, Fadi Li. Raman tensor of AlN bulk single crystal: erratum[J]. Photonics Research, 2020, 8(3): 412 Copy Citation Text show less

    Abstract

    This erratum corrects errors that appeared in Photon. Res.3, 38 (2015)PRHEIZ2327-912510.1364/PRJ.3.000038 related to the polarization of the experimental optical path and a few typos.

    The authors wish to correct the errors related to the description of the experimental optical path polarization in Ref. [1], as well as several simple writing errors, so as to avoid misleading during reading process. The errors relevant to polarization are due to the inconformity between the direction given by the instrument and the actual one, but the scientific discussion is not affected. The details of the correction are as follows.

    The polarization direction of the optical path given by the instrument is 90° different from the actual polarization direction, so the positions of a and b measured by the experiment should be changed.

    Page 39. The angle θ shall be corrected to the angle between the polarization vector of incident light and the y axis; the polarization vectors ei and es of the incident light and the scattered light shall be changed to (0,cosθ,sinθ) during the m-plane test; the Raman intensity of the corresponding A1 vibration mode shall be changed to IA1(θ)˜|a|2cos4θ+|b|2sin4θ+12|a||b|sin2(2θ)cos(φab).

    Page 40. The angle θ mentioned in Fig. 2 shall also be corrected to the angle between the polarization vector of incident light and the y axis

    Page 42. The values of |a| and |b| in Table 1 as well as the discussion on |a| and |b| data involved in Table 1 should be exchanged.

    Some simple writing errors.

    Page 39. The calculation error of the Raman intensity of E1 mode in m-plane parallel polarization configuration should be corrected to IE1(θ)˜|c|2sin2(2θ), but the constant 1/2 in the original paper does not affect the discussion of this mode.

    Page 40. Figure 2 shows a fixed value of |a| and |b|. However, in the third part of the Raman Selection Rules, the ‘one particular choice of values |a| and |b|’ is miswritten as ‘one particular choices of values |a| and |c|’.

    Page 41. In the Figure 4 caption, ‘the angle-independent intensity of A1(LO) and E22 signals from the c-plane surface of the AlN sample for parallel and perpendicular polarizations versus the rotation angle ω’ describes the Figs. 4(g) and 4(h).

    Wei Zheng, Ruisheng Zheng, Feng Huang, Honglei Wu, Fadi Li. Raman tensor of AlN bulk single crystal: erratum[J]. Photonics Research, 2020, 8(3): 412
    Download Citation