Single- and multi-shot laser-induced damages of Ta2O5/SiO2 dielectric mirrors at 1064 nm

Ying Wang; Hongbo He; Yuan'an Zhao; Yongguang Shan; Dawei Li; Chaoyang Wei

doi:10.3788/COL201109.023103

Journals >Chinese Optics Letters >Volume 9 >Issue 2 >Page 023103 > Article

Chinese Optics Letters
Vol. 9, Issue 2, 023103 (2011)

Single- and multi-shot laser-induced damages of Ta2O5/SiO2 dielectric mirrors at 1064 nm

Ying Wang^1、2, Hongbo He¹, Yuan'an Zhao¹, Yongguang Shan^1、2, Dawei Li¹, and Chaoyang Wei¹

Author Affiliations

¹Key Laboratory of Materials for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, Shanghai 201800, China

²Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/COL201109.023103 Cite this Article Set citation alerts

Ying Wang, Hongbo He, Yuan'an Zhao, Yongguang Shan, Dawei Li, Chaoyang Wei. Single- and multi-shot laser-induced damages of Ta2O5/SiO2 dielectric mirrors at 1064 nm[J]. Chinese Optics Letters, 2011, 9(2): 023103 Copy Citation Text

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Abstract

Ta2O5/SiO2 dielectric mirrors deposited by ion beam sputtering (IBS) are studied. The multi-shot laser-induced damage threshold (LIDT) and its dependence on the number of shots are investigated, after which we find that the multi-shot LIDT is lower than that of single-shot. The accumulation effects of defects play an important role in the multi-shot laser damage. A simple model, which includes the conduction band electron production vsa multiphoton and impact ionizations, is presented to explain the experimental phenomena.

Keywords

140.3330 230.4040 230.4170 310.6870

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