A passively Q-switched diode pumped Yb:YAG microchip laser

Haisheng Wu; Ping Yan; Mali Gong; Qiang Liu

Journals >Chinese Optics Letters >Volume 1 >Issue 12 >Page 12697 > Article

Chinese Optics Letters
Vol. 1, Issue 12, 12697 (2003)

A passively Q-switched diode pumped Yb:YAG microchip laser

Haisheng Wu^*, Ping Yan, Mali Gong, and Qiang Liu

Author Affiliations

Digital Photonics Laboratory, Department of Precision Instruments, Tsinghua University, Beijing 100084

show less

DOI: Cite this Article Set citation alerts

Haisheng Wu, Ping Yan, Mali Gong, Qiang Liu. A passively Q-switched diode pumped Yb:YAG microchip laser[J]. Chinese Optics Letters, 2003, 1(12): 12697 Copy Citation Text

show less

Abstract

A passively Q-switched diode pumped Yb:YAG microchip laser with Cr^(4+):YAG saturable absorber mirror is reported. The TEM00 laser pulses are obtained with 1.7-μJ pulse energy, 15-ns pulse width, 0.11-kW peak power, and a repetition rate of 2.2 kHz at 1049 nm. The doped concentration and dimension of Yb:YAG microchip crystal are 10 at.-% and Ф5 × 0.6 mm^(2), respectively.

Keywords

140.3480 140.3580 diode-pumped Q-switched solid-state 140.3540 lasers

Haisheng Wu, Ping Yan, Mali Gong, Qiang Liu. A passively Q-switched diode pumped Yb:YAG microchip laser[J]. Chinese Optics Letters, 2003, 1(12): 12697

Download Citation

Set citation alerts for the article

Tools

Set citation alerts for the article

Save the article for my favorites

Paper Information