• Optoelectronics Letters
  • Vol. 18, Issue 7, 398 (2022)
Lidan LU1, Shuai WANG1, Zhoumo ZENG2, Mingli DONG1, and Lianqing ZHU1、*
Author Affiliations
  • 1School of Instrument Science and Opto Electronics Engineering, Beijing Information Science and Technology University, Beijing 100016, China
  • 2Department of Precision Instrument Engineering, Tianjin University, Tianjin 300072, China
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    DOI: 10.1007/s11801-022-1150-6 Cite this Article
    LU Lidan, WANG Shuai, ZENG Zhoumo, DONG Mingli, ZHU Lianqing. Single silicon waveguide MRR based Fano resonance in the whole spectral bands[J]. Optoelectronics Letters, 2022, 18(7): 398 Copy Citation Text show less

    Abstract

    To improve the integration of Fano devices, we design a T-shaped waveguide coupling micro-ring resonator (MRR) structure to achieve a single cavity with Fano resonance in the whole spectral bands. The mathematical relationship between the phase factor, the coupling coefficient of the bus waveguide, and the Fano resonance slope extinction ratio (ER) is established. The electron beam exposure process is used to obtain a device with an insertion loss of ~3 dB. The maximum ER of the Fano lineshape exceeds 15 dB, and the slope ratio (SR) is 251.3 dB/nm. This design improves the compactness of the Fano resonant device.
    LU Lidan, WANG Shuai, ZENG Zhoumo, DONG Mingli, ZHU Lianqing. Single silicon waveguide MRR based Fano resonance in the whole spectral bands[J]. Optoelectronics Letters, 2022, 18(7): 398
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