• Chinese Optics Letters
  • Vol. 11, Issue s2, S21602 (2013)
Xiaohua Yu, Zhonghao Ge, and Benkang Chang
DOI: 10.3788/col201311.s21602 Cite this Article Set citation alerts
Xiaohua Yu, Zhonghao Ge, Benkang Chang. Photoemission properties of GaAs (100) \beta 2(2 \times 4) and GaAs (100) (4 \times 2) reconstruction phases[J]. Chinese Optics Letters, 2013, 11(s2): S21602 Copy Citation Text show less

Abstract

Using the first-principles plane-wave pseudopotential method, based on the density function theory, the electron structure and optical properties of GaAs (100) \beta 2(2 \times 4) and GaAs (100) (4 \times 2) reconstructions are calculated. The formation energy of As-rich \beta 2(2 \times 4) reconstruction is minus and the formation energy of Ga-rich (4 \tiems 2) reconstruction is positive; As-rich \beta 2(2 \times 4) reconstruction is stable and Ga-rich (4 \times 2) reconstruction is unstable. Ga-rich (4 \times 2) reconstruction owns lower work function. The electrons at two reconstructions both move into the bulk and form a band-binding region. Both the absorption and the reflectivity of As-rich 2(2×4) reconstruction are smaller than the Ga-rich (4×2) reconstruction. Asrich \beta 2(2 \times 4) reconstruction is more benefit for the movement of photos through the surface to emit photoelectrons.
Xiaohua Yu, Zhonghao Ge, Benkang Chang. Photoemission properties of GaAs (100) \beta 2(2 \times 4) and GaAs (100) (4 \times 2) reconstruction phases[J]. Chinese Optics Letters, 2013, 11(s2): S21602
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