• Frontiers of Optoelectronics
  • Vol. 3, Issue 3, 245 (2010)
[in Chinese]1、2、*, [in Chinese]1, and [in Chinese]1
Author Affiliations
  • 1The State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai 200240, China
  • 2Photonic Systems Group, Tyndall National Institute, University College Cork, Cork, Ireland
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    DOI: 10.1007/s12200-010-0105-x Cite this Article
    [in Chinese], [in Chinese], [in Chinese]. High-speed, all-optical XOR gates using semiconductor optical amplifiers in ultrafast nonlinear interferometers[J]. Frontiers of Optoelectronics, 2010, 3(3): 245 Copy Citation Text show less

    Abstract

    We will review three recently-proposed highspeed, all-optical Exclusive OR (XOR) gates operating at 40 and 85 Gb/s, which were demonstrated using ultrafast nonlinear interferometers (UNIs) incorporating semiconductor optical amplifiers (SOAs). The first 40-Gb/s XOR gate was obtained using a dual UNI configuration. The second is a 40-Gb/s XOR gate without additional probe beam required, where the only inputs launched into the setup were data A and B. The XOR logic of data A and B is the sum of two components AB and AB, each of which was obtained from the output of UNI via cross-phase modulation (XPM) in SOAs. Furthermore, an 85-Gb/s XOR gate is, by far, the fastest XOR gate realized by SOAs, which was also demonstrated using a dual UNI structure. The operating speed of the XOR gate was enhanced by incorporating the recently proposed turboswitch configuration. In addition, the SOA switching pulse energies of these XOR gates were lower than 100 fJ.
    [in Chinese], [in Chinese], [in Chinese]. High-speed, all-optical XOR gates using semiconductor optical amplifiers in ultrafast nonlinear interferometers[J]. Frontiers of Optoelectronics, 2010, 3(3): 245
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