Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids

Gong-Ru Lin

Journals >Chinese Optics Letters >Volume 5 >Issue 11 >Page 671 > Article

Chinese Optics Letters
Vol. 5, Issue 11, 671 (2007)

Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids

Gong-Ru Lin

Author Affiliations

Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 106

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Gong-Ru Lin. Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids[J]. Chinese Optics Letters, 2007, 5(11): 671 Copy Citation Text

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Abstract

The interfacial Si nano-pyramid-enhanced electroluminescence (EL) of an ITO/SiOx/p-Si/Al metal-oxide-semiconductor (MOS) diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm2, output power of 16 nW, and lifetime of 10 h is reported.

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Gong-Ru Lin. Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids[J]. Chinese Optics Letters, 2007, 5(11): 671

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