Diode-pumped lasers with intracavity Raman conversion

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Optics Letters >Volume 3 >Issue 0s >Page 9 > Article

Chinese Optics Letters
Vol. 3, Issue 0s, 9 (2005)

Diode-pumped lasers with intracavity Raman conversion

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

Author Affiliations

¹B.I.Stepanov Institute of Physics, National Academy of Sciences of Belarus

²68 F.Skaryna Ave., 220072 Minsk, Republic of Belarus

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Diode-pumped lasers with intracavity Raman conversion[J]. Chinese Optics Letters, 2005, 3(0s): 9 Copy Citation Text

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Abstract

The result of experimental investigation of continuous-wave (CW) diode-pumped microchip and mini lasers with an intracavity Raman conversion in a set of crystals is presented. Self-frequency Raman conversion effect in Nd:KGW, Yb:KYW, Nd:YVO4, and Nd:BaWO4 media in these lasers has been demonstrated for the first time to our best knowledge. Diode pumped microchip lasers with intracavity Raman conversion were proposed and realized in several nitrate, tungstate, and vanadate crystals. CW Raman generation in the mini lasers pumped by an Ar laser and a diode laser was demonstrated. Laser systems based on the Raman conversion and operating at fixed wavelengths as well as in the tunable spectral range of 188-1800 nm were designed.

Keywords

140.3480 140.3550 140.3580 140.3460

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