In recent years, nonlinear integrated optical devices have shown great potential in all-optical signal processing, and a lot of research work has been done on them. The nonlinear integrated optical devices usually use silicon, Ⅲ-Ⅴ, chalcogenide glass and other materials platform. Silicon has very sophisticated low-cost manufacturing platforms, but silicon is an indirect band-gap list of semiconductor materials with very low luminous efficiency, and silicon needs to be integrated with other materials, for example, the integration of Ⅲ-Ⅴ lasers and amplifiers on a silicon substrate to achieve integrated optical path, which makes the integrated optical path complex and expensive, and has compatibility problems. As₂Se₃ chalcogenide glasses stand out among many materials because of their low linear and nonlinear loss, but their refractive index can not be adjusted within a certain range, which is not conducive to the flexibility of all-optical signal processing. The As₂Se₃ chalcogenide glass platform is not compatible with the Complementary Metal-oxide Semiconductor (COMS) process, and the fabrication process is complex. Various ternary and quaternary Ⅲ-Ⅴ compounds with different bandgap wavelengths can form a group of nonlinear photonic materials that can cover the whole spectrum window from ultraviolet to infrared. Ⅲ-Ⅴmaterials can improve the flexibility of custom-made integrated optical devices by changing the components of different materials, within a certain range. Ⅲ-Ⅴ semiconductor platforms enable active and passive integrated optical devices to be combined on the same material platform, which can be achieved by careful design and advanced manufacturing methods, for example, multilayer epitaxy and vertical coning. Ⅲ-Ⅴ semiconductor waveguides have high nonlinear coefficients, and minimal nonlinear absorption can be achieved by selecting the appropriate material composition and operating wavelength. Recent studies have shown that the carrier lifetime of Ⅲ-Ⅴ list of semiconductor materials can be reduced to 0.42 ps, which can reduce the nonlinear loss in the communication band and has the potential for efficient wavelength conversion.In this paper, an InP/In_1-xGa_xAs_yP_1-y strip-loaded waveguide is optimized and designed. The high efficiency broadband wavelength conversion is realized by zero phase mismatch of the waveguide from 1.53 μm to 1.59 μm. The waveguide has good nonlinear optics characteristics with a high Kerr coefficient of 2.2×10^-17 m²/W. The wavelength conversion with 35 nm bandwidth and peak conversion efficiency of -26.7 dB is realized in the optimized waveguide structure. The influence of the doping coefficient y of In_1-xGa_xAs_yP_1-y on the wavelength conversion is discussed. The numerical results show that when the pump power and the pump wavelength are constant, with the doping coefficient y decreasing, the effect of the doping coefficient y on the wavelength conversion of In_1-xGa_xAs_yP_1-y on the wavelength conversion of In_1-xGa_xAs_yP_1-y is obvious, the conversion bandwidth is increased. In addition, the peak conversion efficiency of the waveguide is increased by increasing the pump power while the pump power is kept constant, and the band of the Idle Light is redshifted with the redshift of the pump wavelength. At the same time, the optimum length of InP/In_1-xGa_xAs_yP_1-y strip-loaded waveguide is 5 mm by analysis and numerical simulation. Wavelength converter based on InP/In_1-xGa_xAs_yP_1-y waveguide platform has important application value in optical communication, optical sensing and other fields.