Beam shaping of high power diode laser stack into homogeneous line

Mokhtar SLIMANI; Jun LIU; Jianguo XIN; Jiabin CHEN

doi:10.1007/s12200-014-0382-x

Journals >Frontiers of Optoelectronics >Volume 7 >Issue 1 >Page 102 > Article

Frontiers of Optoelectronics
Vol. 7, Issue 1, 102 (2014)

Beam shaping of high power diode laser stack into homogeneous line

Mokhtar SLIMANI¹, Jun LIU¹, Jianguo XIN^1、*, and Jiabin CHEN²

Author Affiliations

¹School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China

²School of Automation, Beijing Institute of Technology, Beijing 100081, China

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DOI: 10.1007/s12200-014-0382-x Cite this Article

Mokhtar SLIMANI, Jun LIU, Jianguo XIN, Jiabin CHEN. Beam shaping of high power diode laser stack into homogeneous line[J]. Frontiers of Optoelectronics, 2014, 7(1): 102 Copy Citation Text

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Abstract

In this paper, analysis of beam shaping and homogenization of high power diode laser stack into a line focus with dimension of 10 mm×0.5 mm was reported. The beam shaping and homogenization was simulated by using ZemaX-ray tracing technique. The results have shown that intensity distribution after beam shaping and homogenization at the work piece is a flat top for the slow axis with homogeneity over 95% and a Gaussian distribution for the fast axis.

Keywords

beam shaping high power diode laser stack homogeneity homogenization pumping applications

Mokhtar SLIMANI, Jun LIU, Jianguo XIN, Jiabin CHEN. Beam shaping of high power diode laser stack into homogeneous line[J]. Frontiers of Optoelectronics, 2014, 7(1): 102

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