• Acta Photonica Sinica
  • Vol. 44, Issue 3, 319004 (2015)
KANG Yong-qiang1、2、*, GAO Peng3, LIU Hong-mei1, and ZHANG Chun-min2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/gzxb20154403.0319004 Cite this Article
    KANG Yong-qiang, GAO Peng, LIU Hong-mei, ZHANG Chun-min. Reflection Band Gap in Thue-Morse Quasicrystal Containing Anisotropic Left Handed Material[J]. Acta Photonica Sinica, 2015, 44(3): 319004 Copy Citation Text show less

    Abstract

    By means of transfer matrix method, the reflection band gap of Thue-Morse(T-M) structure containing anisotropic left handed material was studied.The influence of incident angle, polarization and lattice scaling factor on reflection band gap was theoretically investigated.It is shown that there is an Omnidirectional Reflection Band (ORB) in the structure.The width of the ORB is determined by the higher frequency band edge for TE polarization and the lower frequency band edge for TM polarization.When an impurity is introduced, a defect mode appears in the reflection band gap.The position of the defect modes is weakly dependent on incident angle for TE polarization, but affected by incident angle for TM polarization.
    KANG Yong-qiang, GAO Peng, LIU Hong-mei, ZHANG Chun-min. Reflection Band Gap in Thue-Morse Quasicrystal Containing Anisotropic Left Handed Material[J]. Acta Photonica Sinica, 2015, 44(3): 319004
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