In order to solve the incompatibility problems between the diamond cut multicrystalline silicon wafer and the currently used HNO3-rich HF-HNO3-H2O acidic wet etching technology, the surface feature of diamond cut multicrystalline silicon wafers was investigated, and the acidic etching was revealed aimed to improve the acidic texture of diamond cut multicrystalline silicon wafers by greatly increase the proportion of HF in the mixed acid solution. The results show that, diamond cut silicon surfaces have about 33% smooth band areas, with the rest of surface being pits of cracking and spalling, similar to the surfaces of slurry cut silicon wafers. These smooth areas leads to 3%~4% higher light reflectivity as compared to the slurry cut multicrystalline silicon wafers. The smooth area is relatively difficult to etch in both HNO3-rich and HF-rich HF-HNO3-H2O mixed acid solution, making the light reflectivity reduction 1%~2% lower than the slurry cut wafers, after the acidic etching. The final light reflectivity of the acidic wet textured diamond cut multicrystalline silicon wafers is thus 4%~6% higher than the similarly textured slurry cut multicrystalline silicon wafers, which is not low enough for solar cell application. Both HNO3-rich and HF-rich etching systerm, can not solve the problem of etching diamond wire saw multicrystalline silicon wafers.