• Optoelectronics Letters
  • Vol. 10, Issue 2, 106 (2014)
Tian-shuai Lü1, Xu-hui XU1, Da-jian WANG2, Liang SUN2, and Jian-bei QIU1、*
Author Affiliations
  • 1College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
  • 2School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
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    DOI: 10.1007/s11801-014-3210-z Cite this Article
    Lü Tian-shuai, XU Xu-hui, WANG Da-jian, SUN Liang, QIU Jian-bei. Fabrication, structure and photoluminescence properties of Eu3+-activated red-emitting Ba2Gd2Si4O13phosphors for solid-state lighting[J]. Optoelectronics Letters, 2014, 10(2): 106 Copy Citation Text show less

    Abstract

    Eu3+-activated red-emitting Ba2Gd2Si4O13phosphors are prepared via microwave (MW) synthesis and solid-state (SS) method. The structural and luminescent properties of phosphors are investigated by X-ray diffraction (XRD), photoluminescence (PL) spectra and scanning electron microscopy (SEM). Upon 393 nm excitation, compared with the sample sintered by SS method, luminescence enhancement is observed in the sample synthesized by MW method. The mechanism of MW synthesis process is discussed in detail. Results indicate that the PL enhancement is probably related to the concave-convex phosphor surfaces and uniform grains, which may reinforce scattering of excitation light. Our research may further promote the understanding of MW synthesis and extend the application of Eu3+-activated Ba2Gd2Si4O13in white light-emitting diodes.
    Lü Tian-shuai, XU Xu-hui, WANG Da-jian, SUN Liang, QIU Jian-bei. Fabrication, structure and photoluminescence properties of Eu3+-activated red-emitting Ba2Gd2Si4O13phosphors for solid-state lighting[J]. Optoelectronics Letters, 2014, 10(2): 106
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