Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 34 >Issue 1 >Page 11 > Article

Acta Photonica Sinica
Vol. 34, Issue 1, 11 (2005)

Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror

[in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror[J]. Acta Photonica Sinica, 2005, 34(1): 11 Copy Citation Text

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Abstract

A new type of surface-state semiconductor saturable absorption mirror was introduced, with which passive Q-switched modelocking of diode-end-pumped Yb∶ YAG laser was realized. At the 1.4 W of pumping power, Q-switched modelocking seires was obtained, which has 1 mW average output and 200 MHz frequency.

Keywords

Q-switched modelocking Surface state Yb∶ YAG laser Semiconductor saturable absorption mirror

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