• Electronics Optics & Control
  • Vol. 26, Issue 11, 105 (2019)
ZHOU Zi-ang1、2, YANG Yi2, and HAO Pei-yu2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3969/j.issn.1671-637x.2019.11.022 Cite this Article
    ZHOU Zi-ang, YANG Yi, HAO Pei-yu. Single-Photon Detection Circuit Based on InGaAs/InP APD[J]. Electronics Optics & Control, 2019, 26(11): 105 Copy Citation Text show less

    Abstract

    Single-photon detection technology uses a single photon as the information carrier, which breaks the existing laser detection limit, and is currently a hot topic in applied basic research at home and abroad.When using InGaAs/InP APD (Avalanche Photodiode) to detect 1064 nm laser, there is a large dark-counting rate and after-pulse probability, which affects the accuracy of detection.Compative analysis is made to the effects of three quenching methods on the performance of single-photon detection circuit.Gated quenching has less dead time than passive quenching and active quenching, and has better inhibition of dark-counting rate and after-pulse probability.For the gated quenching method, four schemes of sinusoidal gating of self-differencing, dual-APD balanced detection and capacitance balance are studied to effectively reduce the spike noise generated by the gating signal.By optimizing and debugging the detection circuit of the sinusoidal gating method, the dead time of the detection circuit is 9.3 ns.When the detection efficiency is 9%, the dark-counting rate is 1.64×10-6 /ns and the after-pulse probability is 3%.
    ZHOU Zi-ang, YANG Yi, HAO Pei-yu. Single-Photon Detection Circuit Based on InGaAs/InP APD[J]. Electronics Optics & Control, 2019, 26(11): 105
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