• Journal of Advanced Dielectrics
  • Vol. 14, Issue 1, 2330001 (2024)
Guoyang Shen1, Renhong Liang1, Zhiguo Wang1、*, Zhiyong Liu2, and Longlong Shu1、**
Author Affiliations
  • 1School of Physics and Materials Science Nanchang University Nanchang 330031, P. R. China
  • 2School of Materials Science and Engineering Nanchang Hangkong University, Nanchang 330063, P. R. China
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    DOI: 10.1142/S2010135X23300013 Cite this Article
    Guoyang Shen, Renhong Liang, Zhiguo Wang, Zhiyong Liu, Longlong Shu. Flexoelectricity in oxide thin films[J]. Journal of Advanced Dielectrics, 2024, 14(1): 2330001 Copy Citation Text show less

    Abstract

    Flexoelectric effect describes the electromechanical coupling between the strain gradient and its internal polarization in all dielectrics. Despite this universality, the resulting flexoelectric field remains small at the macroscopic level. However, in nanosystems, the size-dependent effect of flexoelectricity becomes increasingly significant, leading to a notable flexoelectric field that can strongly influence the material’s physical properties. This review aims to explore the flexoelectric effect specifically at the nanoscale. We achieve this by examining strain gradients generated through two distinct methods: internal inhomogeneous strain and external stimulation. In addition, advanced synthesis techniques are utilized to enhance the properties and functionalities associated with flexoelectricity. Furthermore, we delve into other coupled phenomena observed in thin films, including the coupling and utilization of flexomagnetic and flexophotovoltaic effects. This review presents the latest advancements in these areas and highlights their role in driving further breakthroughs in the field of flexoelectricity.
    Guoyang Shen, Renhong Liang, Zhiguo Wang, Zhiyong Liu, Longlong Shu. Flexoelectricity in oxide thin films[J]. Journal of Advanced Dielectrics, 2024, 14(1): 2330001
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