The fabrication of a terahertz filter with -40 dB attenuation depth at the resonant frequency of 130 GHz is presented, while some technical details during the procedures of evaporation, lithography, development etching introduced. filter sample is<±3μm,whichisacceptabandlebwetytheinvestiaregationoftheeffeThectofmerroracofhininthegerrorsonfabricatedtransmission characteristics. The measured transmission response of the fabricated sample by employing free space measurement setup is in good agreement with the design, which demonstrates the reliability and robustness of the fabrication technology. Finally, the feasibility and improvements of the presented fabrication technology applied to higher frequency devices are discussed. The presented technology based on silicon substrate is helpful in integration development of electronics devices and photonic devices.