• Optoelectronics Letters
  • Vol. 17, Issue 5, 302 (2021)
Ying-li YANG1、2, Zeng-guang LIU1, Guo-dong WANG1、*, Ying WANG3, Qing YUAN3, and Guang-sheng FU3
Author Affiliations
  • 1School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China
  • 2Instrumental Analysis Center, Henan Polytechnic University, Jiaozuo 454000, China
  • 3College of Physics Science & Technology, Hebei University, Baoding 071002,China
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    DOI: 10.1007/s11801-021-0108-4 Cite this Article
    YANG Ying-li, LIU Zeng-guang, WANG Guo-dong, WANG Ying, YUAN Qing, FU Guang-sheng. Photoluminescence study of the In0.3Ga0.7As surface quantum dots coupling structure[J]. Optoelectronics Letters, 2021, 17(5): 302 Copy Citation Text show less

    Abstract

    Photoluminescence (PL) was investigated as functions of the excitation intensity and temperature for a coupling surface quantum dots (SQDs) structure which consists of one In0.3Ga0.7As SQDs layer being stacked on multi-layers of In0.3Ga0.7As buried quantum dots (BQDs). Accompanied by considering the localized excitons effect induced by interface fluctuation, carrier transition between BQDs and SQDs were analyzed carefully. The PL measurements confirm that there is a strong carrier transition from BQDs to SQDs and this transition leads to obvious different PL characteristics between BQDs and SQDs. These results are useful for future application of SQDs as surface sensitive sensors.
    YANG Ying-li, LIU Zeng-guang, WANG Guo-dong, WANG Ying, YUAN Qing, FU Guang-sheng. Photoluminescence study of the In0.3Ga0.7As surface quantum dots coupling structure[J]. Optoelectronics Letters, 2021, 17(5): 302
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