• Chinese Optics Letters
  • Vol. 8, Issue 7, 683 (2010)
Shenlei Shi1 and Tengchao Huang2
Author Affiliations
  • 1Department of Physics, China Jiliang University, Hangzhou 310018, China
  • 2Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
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    DOI: 10.3788/COL20100807.0683 Cite this Article Set citation alerts
    Shenlei Shi, Tengchao Huang. Photoluminescence study of the annihilation process of donor-bound excitons in ZnO: observation of quantum mechanical interference[J]. Chinese Optics Letters, 2010, 8(7): 683 Copy Citation Text show less

    Abstract

    We report a photoluminescence observation of the coupling of donor-bound excitons and longitudinal optical phonons in high-quality ZnO crystals at 5 K. The first-order phonon Stockes line of donor-bound excitons exhibits a distinct asymmetric line shape with a clear dip at its higher energy side, suggesting that quantum mechanical interference occurs during the annihilation of donor-bound excitons. The donor binding energy is determined to be 49.3 meV from spectral featural.
    Shenlei Shi, Tengchao Huang. Photoluminescence study of the annihilation process of donor-bound excitons in ZnO: observation of quantum mechanical interference[J]. Chinese Optics Letters, 2010, 8(7): 683
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