• Optoelectronics Letters
  • Vol. 11, Issue 4, 277 (2015)
Shi-na LI1, Rui-xin MA1、2、*, Dong-ran LI1, Fan YANG1, Xiao-yong ZHANG1, Xiang LI1, and Hong-min ZHU1
Author Affiliations
  • 1School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083, China
  • 2Beijing Key Laboratory of Special Melting and Preparation of High-End Metal Materials, Beijing 100083, China
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    DOI: 10.1007/s11801-015-5049-3 Cite this Article
    LI Shi-na, MA Rui-xin, LI Dong-ran, YANG Fan, ZHANG Xiao-yong, LI Xiang, ZHU Hong-min. Synthesis and characterization of Cu2ZnSnS4from Cu2SnS3and ZnS compounds[J]. Optoelectronics Letters, 2015, 11(4): 277 Copy Citation Text show less

    Abstract

    The Cu2ZnSnS4(CZTS) powders are successfully synthesized by using ZnS and Cu2SnS3as raw materials directly without any intermediate phase at 450 °C for 3 h in Ar atmosphere. The crystalline structure, morphology and optical properties of the CZTS powders are characterized by X-ray diffraction (XRD), Raman spectrum, field emission scanning electron microscopy (FESEM) and ultraviolet-visible (UV-vis) spectrophotometer, respectively. The results show that the band gap of the obtained CZTS is 1.53 eV. The CZTS film is fabricated by spin coating a mixture of CZTS powders and novolac resin with a weight percentage of 30%. The photoelectrical properties of such CZTS films are measured, and the results show an incident light density of 100 mW·cm-2with the bias voltage of 0.40 V, and the photocurrent density can approach 9.80×10-5A·cm2within 50 s, giving an on/off switching ratio of 1.64.
    LI Shi-na, MA Rui-xin, LI Dong-ran, YANG Fan, ZHANG Xiao-yong, LI Xiang, ZHU Hong-min. Synthesis and characterization of Cu2ZnSnS4from Cu2SnS3and ZnS compounds[J]. Optoelectronics Letters, 2015, 11(4): 277
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