Effects of the Structure of HfO2 Thin Films on Its Laser-induced Damage Threshold

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 34 >Issue 2 >Page 176 > Article

Acta Photonica Sinica
Vol. 34, Issue 2, 176 (2005)

Effects of the Structure of HfO₂ Thin Films on Its Laser-induced Damage Threshold

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effects of the Structure of HfO₂ Thin Films on Its Laser-induced Damage Threshold[J]. Acta Photonica Sinica, 2005, 34(2): 176 Copy Citation Text

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Abstract

HfO 2 films have been deposited with electron beam evaporation of HfO 2 and ion assisted electron beam evaporation of Hf. Optical and structural properties and laser induce damage threshold of the films have been studied; it was found that HfO 2 film deposited with electron beam evaporation of Hf with ion assisted technology shows uniform structural properties and higher laser induced damage threshold. The relation between structural and damage threshold of HfO 2 films has also been studied.

Keywords

Laser-induced damage threshold HfO_2 Film

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