The carrier density mobility in organic electron transporting semiconductor is very low compared with the inorganic semiconductor, which affects the efficiency and luminance of Organic Light-emitting Devices (OLEDs). To improve the performance of OLED, the electron injecting and transporting ability should be enhanced, and n-type electrically doping can enhance the electron transporting ability of the orangic materials. Li3N was used as n-type dopant and Alq3∶Li3N doped layer was used as the electron injecting layer for OLED. As a result, the performance of OLED were improved. The optimal doping concentration and the thickness were 5% and 10 nm, respectively. Because Li3N is stable in the air and can decomposite to Li atoms and nitrogen at a low temperature and pressure, the disadvantage can be avoided of the effecting of moisture and oxygen to the metal dopant such as Li and Cs. The research result is also helpful to the preserve and doping process.