Experimental study on the depth of electric field punching through into the absorption layer of APD

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Optics Letters >Volume 3 >Issue 0s >Page 62 > Article

Chinese Optics Letters
Vol. 3, Issue 0s, 62 (2005)

Experimental study on the depth of electric field punching through into the absorption layer of APD

[in Chinese]¹, [in Chinese]², [in Chinese]³, [in Chinese]¹, [in Chinese]¹, [in Chinese]³, [in Chinese]², and [in Chinese]¹

Author Affiliations

¹School for Information and Opto-Electronic Science and Engineering, South China Normal University, Guangzhou 510631

²Department of Applied Physics, South China University of Technology, Guangzhou 510641

³College of Applied Physics, Guangdong University of Technology, Guangzhou 510090

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Experimental study on the depth of electric field punching through into the absorption layer of APD[J]. Chinese Optics Letters, 2005, 3(0s): 62 Copy Citation Text

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Abstract

Dark-current-voltage curves and photon-current-voltage curves were measured by a passive quenched circuit so that the voltage applied to the avalanche photodiode can be much higher than breakdown voltage in study on the depth of punch through. The photo-current-voltage curve indicated clearly the punch-through voltage while the dark current-voltage curve is insensitive to the punch through. Furthermore, the avalanches initiated by the photo-generated carrier at a voltage lower than that from the thermo-generated carriers and explained based on the different distribution of the carriers.

Keywords

040.3060 040.3780 040.5160 230.5170 270.5290 040.5570

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