• Acta Photonica Sinica
  • Vol. 34, Issue 9, 1340 (2005)
[in Chinese]1、2, [in Chinese]3, [in Chinese]2, [in Chinese]2, [in Chinese]1, [in Chinese]1, and [in Chinese]1、4
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Enhanced Emission From Eu3+ in B Ions Doped Sol-gel SiO2 Phosphors[J]. Acta Photonica Sinica, 2005, 34(9): 1340 Copy Citation Text show less

    Abstract

    Eu single doped and Eu,B co-doped SiO_2 xerogels and films were prepared by sol-gel process,using tetraethoxy silane,boric acid and aluminium nitrate as precursors,europium nitrate as the dopant.The influence of B ions and annealing temperature on luminescent properties of phosphors has been studied using fluorescence spectrum,X-ray diffraction and IR spectrum.The phosphors showed prominent luminescent in red.When heated up to 500℃,the emission spectrum showed six characteristic emission peaks,due to the electronic transition of ~5D_0→~7F_J(J=0,1,2,3,4)for Eu~(3+) respectively and the electronic transition of ~5D_0→~7F_1 was splited two peaks.When B ions were introduced to the Eu doped samples,the red Eu~(3+) emission was enhanced remarkably.This is because Si-O-B bonds were formed in the luminescent materials,and the symmetry of network was breached.Annealing changed the network structure and reduced the content of-OH and water,which benefits intensity of emission from Eu~(3+).The intensity of emission from
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Enhanced Emission From Eu3+ in B Ions Doped Sol-gel SiO2 Phosphors[J]. Acta Photonica Sinica, 2005, 34(9): 1340
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