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    Journals >Acta Photonica Sinica >Volume 31 >Issue 7 >Page 832 > Article
    • Acta Photonica Sinica
    • Vol. 31, Issue 7, 832 (2002)
    INFLUENCE OF SILICON-VAPOR NUCLEATION ON SILICON CARBIDE FILM GROWTH USING APCVD
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. INFLUENCE OF SILICON-VAPOR NUCLEATION ON SILICON CARBIDE FILM GROWTH USING APCVD[J]. Acta Photonica Sinica, 2002, 31(7): 832 Copy Citation Text show less

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. INFLUENCE OF SILICON-VAPOR NUCLEATION ON SILICON CARBIDE FILM GROWTH USING APCVD[J]. Acta Photonica Sinica, 2002, 31(7): 832
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