• Optoelectronics Letters
  • Vol. 8, Issue 1, 4 (2012)
Jing-wei CAI1, Jian-ping XU1, Xiao-song ZHANG1, Xi-ping NIU1, Tong-yan XING1, Ting JI2, and Lan LI1、*
Author Affiliations
  • 1Key Laboratory of Display Materials and Photoelectric Devices of Education Ministry of China, Key Laboratory for Optoelectronic Materials and Devices, Insitute of Material Physics, Tianjin University of Technology, Tianjin 300384, China
  • 2Tianjin Xinhua Staff and Workers University, Tianjin 300040, China
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    DOI: 10.1007/s11801-012-1042-2 Cite this Article
    CAI Jing-wei, XU Jian-ping, ZHANG Xiao-song, NIU Xi-ping, XING Tong-yan, JI Ting, LI Lan. Defect-related visible luminescence of ZnO nanorods annealed in oxygen ambient[J]. Optoelectronics Letters, 2012, 8(1): 4 Copy Citation Text show less

    Abstract

    ZnO nanorods prepared by a solution-phase method are annealed at different temperatures in oxygen ambient. The luminescence properties of the samples are investigated. In the same excitation condition, the photoluminescence (PL) spectra of all samples show an ultraviolet (UV) emission and a broad strong visible emission band. The asymmetric visible emission band of annealed samples has a red-shift as the annealing temperature increasing from 200 ℃ to 600 ℃ and it can be deconvoluted into two subband emissions centered at 535 nm (green emission) and 611 nm (orange-red emission) by Gaussian-fitting analysis. Analyses of PL excitation (PLE) spectra and PL spectra at different excitation wavelengths reveal that the green emission and the orange-red emission have a uniform initial state, which can be attributed to the electron transition from Zn interstitial (Zni) to oxygen vacancy (Vo) and oxygen interstitial (Oi), respectively.
    CAI Jing-wei, XU Jian-ping, ZHANG Xiao-song, NIU Xi-ping, XING Tong-yan, JI Ting, LI Lan. Defect-related visible luminescence of ZnO nanorods annealed in oxygen ambient[J]. Optoelectronics Letters, 2012, 8(1): 4
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