Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

Shurong Wang; Hongliang Zhu; Zhihong Liu; Ruiying Zhang; Ying Ding; Lingjuan Zhao; Fan Zhou; Jing Bian; Lufeng Wang; Wei Wang

Journals >Chinese Optics Letters >Volume 2 >Issue 6 >Page 06359 > Article

Chinese Optics Letters
Vol. 2, Issue 6, 06359 (2004)

Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

Shurong Wang^1、2、*, Hongliang Zhu¹, Zhihong Liu¹, Ruiying Zhang¹, Ying Ding¹, Lingjuan Zhao¹, Fan Zhou¹, Jing Bian¹, Lufeng Wang¹, and Wei Wang¹

Author Affiliations

¹Center of Optoelectronics Research &

²Development, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

show less

DOI: Cite this Article Set citation alerts

Shurong Wang, Hongliang Zhu, Zhihong Liu, Ruiying Zhang, Ying Ding, Lingjuan Zhao, Fan Zhou, Jing Bian, Lufeng Wang, Wei Wang. Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum[J]. Chinese Optics Letters, 2004, 2(6): 06359 Copy Citation Text

show less

Abstract

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-III trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.

Keywords

230.0250 230.3670 230.0230 light-emitting diodes optical devices optoelectronics

Download Citation

Set citation alerts for the article

Tools

Set citation alerts for the article

Save the article for my favorites

Paper Information