In this paper, we studied the formation of self-organized domain arrays created by moving biased tip of scanning probe microscope (SPM) in deuterated TGS crystals. The shape of created domains depends significantly on scanning direction and applied voltage. For scanning along c axis, the domain shape drastically changed from arrays to stripe domains at 150V. Scanning perpendicular to c axis led to formation of the array of the dashed domains. Increasing of the dashed domain length leads to change of domain shape from arrays of dashed domains to solid stripe domain. The obtained effect has been considered in terms of the kinetic approach as a result of formation of comb-like domain with charged domain walls in the bulk due to repetitive appearance of the domain spikes. The spontaneous backswitching under the action of the depolarization field leads to the fast growth of the tooth to the surface and results in the transformation of the domain shape. The computer simulation of the nonuniform motion of charged domain wall under the action of depolarization field has been done. The obtained results demonstrate the essential role of screening processes and pave the way for further improvement of domain engineering methods.