• Photonics Research
  • Vol. 13, Issue 5, 1249 (2025)
Mengmeng Dai1, Zhiying Wang2,3, Kejie Li1, Jiaqi Zhao1, and Zuoling Fu1,*
Author Affiliations
  • 1Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, China
  • 2Ministry of Education Key Laboratory for Cross-Scale Micro and Nano Manufacturing, Nanophotonics and Biophotonics Key Laboratory of Jilin Province, School of Physics, Changchun University of Science and Technology, Changchun 130022, China
  • 3e-mail: zhiyingw@cust.edu.cn
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    DOI: 10.1364/PRJ.553591 Cite this Article Set citation alerts
    Mengmeng Dai, Zhiying Wang, Kejie Li, Jiaqi Zhao, Zuoling Fu, "Erbium as an energy trap center for manipulating NIR-II luminescence of Ho3+ in fluoride towards phonon-based ratiometric thermometry," Photonics Res. 13, 1249 (2025) Copy Citation Text show less

    Abstract

    Thermal quenching has been known to entangle with luminescence naturally, which is primarily driven by a multi-phonon relaxation (MPR) process. Considering that MPR and the phonon-assisted energy transfer (PAET) process may interact cooperatively plays a critical role in conducting the thermal response of luminescence thermometry. Herein, an energy mismatch system of Yb3+/Ho3+/Er3+ co-doped β-NaLuF4 hollow microtubes was delicately proposed to combat thermal quenching of near-infrared (NIR)-II luminescence of Ho3+ via premeditated Er3+-mediated PAET processes under 980 nm excitation. Meanwhile, the mechanism of anti-thermal quenching is attributed to the Er3+ as an energy trap center to facilitate the PAET process, thereby enabling a considerable energy transfer efficiency of over 80% between Er3+ and Ho3+ without Yb3+ ions as sensitizers. Leveraging the accelerated PAET process at increased temperature and superior emission, the phonon-tuned NIR-II ratiometric thermometers were achieved based on fluoride beyond the reported oxide host, enabling excellent relative sensitivity and resolution (Sr=0.57%K-1, δT=0.77K). This work extends the significant effect of PAET on overcoming the notorious thermal quenching, and offers a unique physical insight for constructing phonon-tuned ratiometric luminescence thermometry.

    1. INTRODUCTION

    Lanthanide-ion-doped near-infrared (NIR) luminescence materials have attracted considerable attention owing to their narrow excitation and emission peaks, stable physical and chemical characteristics, as well as being promising candidates in optical and biological applications [15]. Unfortunately, the practical applications of NIR-II (1000–1700 nm) luminescence in some fields, including temperature sensing, bioimaging, and bioassays, have been seriously affected by the decreased emission intensity with the increasing temperature, which is known as the normal thermal quenching effect [68]. Multiple strategies have been devoted to combating thermal quenching of NIR-II luminescence, for example, desorption of adsorbents on lanthanide-doped NIR-II emitting materials, doping additional ions to adjust the crystal field environment, selection of hosts with moderate phonon energy, and manipulation of the design energy transfer process to populate the corresponding excited state energy level [911].

    The energy transferred to the activator ion in a luminescent system is limited. Generally, part of the energy is emitted for luminescence through radiative transitions, while the other part is dissipated through lattice vibrations or other forms, naturally involving a multi-phonon relaxation (MPR) process [12]. Meanwhile, the phonon-assisted energy transfer (PAET) process can effectively facilitate the population of the corresponding excited state level in a mismatched energy level system, further leading to the compensation of energy dissipation for anti-thermal quenching of NIR-II luminescence [13]. More importantly, benefiting from the rich intermediate energy level of Ho3+ and Er3+, this can provide attractive possibilities for multi-phonon relaxation and phonon-assisted energy transfer processes, which further could regulate the normal thermal quenching of NIR-II luminescence and temperature sensing performance.

    Specifically, lanthanide-based luminescence intensity ratio (LIR) thermometry is much encouraging for achieving accurate temperature, no matter the changes in doping concentration, excitation power, and detection efficiency. For example, the reported Sc2W3O12:Yb/Er phosphors with negative thermal expansion have achieved the thermal enhancement of Er3+ for green and red emission, as well as NIR-II luminescence through introducing Zr and Nb, enabling the design of optical thermometers in the visible region [14]. Recently, K3ZrF7:Yb/Er nanocrystals also exhibited abnormal thermal enhancement of upconversion luminescence by energy compensation from defects induced by the heterovalent doping of Yb3+/Er3+ into the host lattice, which results in the constructed nanothermometer possessing the highest Sr of 1.55%  K1 based on the conventional thermal coupling energy level of Er3+ [15]. Encouraged by the reported progress, it is worth noting that a more detailed and systematic exploration from the perspective of phonon-based MPR and PAET still has a profound effect on temperature sensing and manipulation of NIR-II luminescence in fluoride systems beyond the traditional oxide host.

    In this study, based on MPR and PAET processes, we have delicately proposed the phonon-based LIR thermometry in the NIR-II region through manipulating the Ho3+ luminescence in β-NaLuF4:Ho3+/Er3+/Yb3+ hollow microtubes. Meanwhile, the mechanism of anti-thermal quenching of Ho3+ is attributed to the Er3+ as an energy trap center to facilitate the PAET process, thereby enabling a considerable energy transfer efficiency of up to 80.52% between Er3+ and Ho3+ without Yb3+ ions as sensitizers. Benefiting from the thermally boosted emission (Ho3+:1190  nm, I56I58 transition) and thermally quenched emission (Er3+:1530  nm, I413/2I415/2 transition), the phonon-based NIR-II ratiometric thermometers readily rendered the superior sensitivity and resolution (Sr=0.57%  K1, δT=0.77  K). This work not only elucidates the phonon-assisted strategy to build an efficient NIR-II emission system but also presents a promising trajectory for the advancement of cutting-edge ratiometric temperature sensing.

    2. EXPERIMENT

    A. Materials and Synthesis

    Lanthanide-doped β-NaLuF4 hollow microtubes were synthesized using a previously described facile hydrothermal approach [16]. The synthesis typically commenced with the dissolution of NaNO3, KNO3, Lu(NO3)3, Yb(NO3)3, Er(NO3)3, and Ho(NO3)3 in a beaker, according to the stoichiometric ratio. This was followed by stirring for 30 min to form a mixed solution. Meanwhile, 0.9260 g NH4F was dissolved in 14 mL of deionized water under continual stirring and subsequently added to the aforementioned solution. The resulting mixture was transferred into a 50 mL Teflon-lined autoclave and maintained at 200°C for 12 h. Once cooled to room temperature, the final samples were produced through a process of centrifugal precipitation, followed by three washes using deionized water and ethanol, and then drying at 60°C for 10 h.

    B. Characterization

    X-ray diffraction (XRD) patterns of lanthanide-doped β-NaLuF4 hollow microtubes were assessed using a Rigaku Smart-Lab diffractometer with Cu Kα radiation (λ=0.15405  nm). We used field emission scanning electron microscopy (FE-SEM) (Regulus-8100, Hitachi) combined with energy dispersive X-ray spectroscopy (EDS) analysis to examine the morphological properties and elemental composition of samples. The emission spectra of the samples were measured using an Andor SR-500i spectrometer (Andor Technology Co., Belfast, UK) under 980 nm laser diode (LD) excitation, which combined an SR830 DSP lock-in amplifier and a CCD detector. Fourier transform infrared (FT-IR) spectroscopy was implemented using an FT-IR spectroscope (VERTEX 80, Bruker). The temperature-dependent luminescence property of the samples was monitored by a temperature control system (313–523 K) (TAP-02, orient-KOJI).

    3. RESULTS AND DISCUSSION

    In general, resonant energy transfer (RET) can occur when the energy difference is small enough, such as in the case of Yb3+-Er3+ pairs [Fig. 1(a)]. For the energy mismatch between donor and acceptor, nonresonant energy transfer between rare earth ions can be achieved through the assistance of phonons in a host, including annihilating and emitting phonons [Figs. 1(b) and 1(c)]. According to the Miyakawa-Dexter theory, the corresponding temperature-dependent phonon-assisted energy transfer rate WPAET(T) can be described as Eqs. (1) and (2) [1719]: WPAET(T)=WPAET(0)[exp(ΔE/kBT)1]p,WPAET(T)=WPAET(0)[1exp(ΔE/kBT)]p,where WPAET(0) is the PAET rate at 0 K; T is the absolute temperature; ΔE is the energy mismatch between donor and acceptor; p is the phonon number involved in the PAET process; and kB is the Boltzmann constant. Moreover, the temperature-dependent MPR rates can be mathematically written as WMPR(T)=WMPR(0)[1exp(hv/kBT)]p.WMPR(T) represents the MPR rates at temperatures 0 K and T, respectively. That is to say, the PAET and MPR processes are strongly correlated with phonons of hosts with increasing temperature, and further regulate the NIR-II luminescence, enabling the interesting opportunity for phonon-based LIR ratiometric temperature sensing.

    (a) Schematic diagram of resonance energy transfer between donor (ion A) and acceptor (ion B). (b), (c) Schematic diagram of phonon-assisted energy transfer; ΔE is the energy mismatch between donor and acceptor.

    Figure 1.(a) Schematic diagram of resonance energy transfer between donor (ion A) and acceptor (ion B). (b), (c) Schematic diagram of phonon-assisted energy transfer; ΔE is the energy mismatch between donor and acceptor.

    By virtue of the moderate phonon energy and high disorder in structure, β-NaLuF4 has been widely employed as an ideal candidate fluoride host for upconversion luminescence. Despite previous exciting achievements, the effect of phonon energy on luminescence and temperature sensing in fluoride hosts has been rarely systematically explored in detail, particularly in the NIR-II region. Herein, an energy mismatch system of Yb3+/Ho3+/Er3+ co-doped β-NaLuF4 hollow microtubes was carefully proposed. Under 980 nm excitation, the electron pumps from the ground state to the excited state level of Yb3+ by absorbing excitation energy. Subsequently, it transfers a portion of the energy to adjacent Er3+ owing to its small energy level mismatch, achieving downshifting luminescence (I413/2I415/2 transition, 1530  nm) of Er3+ through the MPR process. Moreover, due to the energy mismatch between Yb3+ and Ho3+, the PAET process is necessary to promote NIR-II luminescence (I56I58 transition, 1190  nm) [2022]. Accordingly, the phonon-based LIR (IHo/IEr) of a ratiometric NIR-II thermometer can be derived by the above analysis [23]: LIR=IHoIEr=WPAETA1WMPRWRA2=α×[1exp(hvKT)]β,α=WPAET(0)A1WMPR(0)WRA2,β=ΔE1ΔE2hv.ΔE1 and ΔE2 are the energy gaps. Herein, ΔE1 is the energy gap between I411/2 and I413/2 of Er3+ ions, ΔE2 is the energy gap between F25/2 of Yb3+ ions and I56 of Ho3+ ions, WR is the rate of resonant energy transfer, and A1 and A2 are the spontaneous emission rate of the corresponding emitting transitions, respectively.

    As a proof of concept, we first synthesized the β-NaLuF4:Yb3+, Er3+, Ho3+ hollow microtubes by a moderate hydrothermal approach. The XRD patterns of β-NaLuF4:18%Yb3+, x%Er3+ (x=1, 3, 5, 7) and β-NaLuF4:18%Yb3+, y%Ho3+ (y=0.5, 1, 1.5, 2) with diverse doping concentrations are shown in Figs. 2(a) and 2(b), which are well indexed to the standard data with JCPDS#27-0726, confirming the crystal phase purity of all prepared samples. Given the significant influence of host crystalline phonon energy on NIR-II emission efficiency, FT-IR and Raman spectra emerge as valuable tools for investigating material phonon modes. As presented in Fig. 2(c) and Appendix A, there are five obvious Raman peaks of 239, 294, 350, 497, and 630  cm1, which are characteristic of the hexagonal phase structure and exhibit similarities to those observed in reported NaYF4 powders. SEM and EDS element mapping pictures of β-NaLuF4:18%Yb3+, 5%Er3+ hollow microtubes are displayed in Fig. 2(d) to demonstrate the microscopic morphology and elemental composition, revealing that Na, Lu, Yb, Er, and F are uniformly distributed on the surface of the hollow microtubes, which further demonstrates that Yb3+ and Er3+ were successfully doped into the crystal lattice. In addition, as shown in Figs. 2(e) and 2(f), the sample is composed of high-quality hollow microtubes with a length of 6.85  μm and a width of 2.25  μm. As such, Yb3+/Er3+/Ho3+ co-doped β-NaLuF4 samples have been successfully synthesized, offering an essential foundation for the investigation of luminescence properties and temperature sensing.

    XRD patterns of (a) β-NaLuF4:18%Yb3+, x%Er3+ (x=1, 3, 5, 7) and (b) β-NaLuF4:18%Yb3+, y%Ho3+ (y=0.5, 1, 1.5, 2) hollow microtubes. (c) Raman spectrum of the β-NaLuF4 hollow microtubes at room temperature under 532 nm excitation. (d) SEM images and corresponding elemental mapping images and (e), (f) size distribution histogram of β-NaLuF4:18%Yb3+, 5%Er3+.

    Figure 2.XRD patterns of (a) β-NaLuF4:18%Yb3+, x%Er3+ (x=1, 3, 5, 7) and (b) β-NaLuF4:18%Yb3+, y%Ho3+ (y=0.5, 1, 1.5, 2) hollow microtubes. (c) Raman spectrum of the β-NaLuF4 hollow microtubes at room temperature under 532 nm excitation. (d) SEM images and corresponding elemental mapping images and (e), (f) size distribution histogram of β-NaLuF4:18%Yb3+, 5%Er3+.

    The NIR-II emission spectra of β-NaLuF4:18%Yb3+, 5%Er3+ and β-NaLuF4:18%Yb3+, 1.5%Ho3+ hollow microtubes were collected under 980 nm excitation [Fig. 3(a)]. The optimal doping concentration of Er3+ in the NIR-II region is 5%, while it remains at 1% for visible emissions in β-NaLuF4:Yb3+, Er3+ samples, which can be attributed to the accelerated cross relaxation process, promoting the population of a lower excited state level with increased Er3+ doping concentration for enhanced downshifting emission (Appendix B) [24,25]. In contrast, the NIR-II emission intensity of Ho3+ exhibited first an increase and then decreased owing to the concentration quenching effect with doping content from 0.5 to 2%. Furthermore, the superior characteristic emission peaks, corresponding to the I413/2I415/2 transition of Er3+ and I56I58 transition of Ho3+, were obviously observed in co-doped Er3+/Ho3+ samples, as shown in Figs. 3(b) and 3(c). More importantly, elaborately selecting a doping strategy including the Yb3+/Er3+/Tm3+ and Yb3+/Ho3+/Tm3+ system in β-NaLuF4 simultaneously enables the outstanding NIR-II emissions, which far exceeds the reported NIR-II emitting materials (Appendix C).

    Downshifting emission spectra of (a) β-NaLuF4:18%Yb3+, 5%Er3+ and β-NaLuF4:18%Yb3+, 1.5%Ho3+ and (b) β-NaLuF4:18%Yb3+, 5%Er3+, z%Ho3+ (z=1, 2, 3, 5) under 980 nm excitation. (c) Dependence of NIR-II (Ho3+:1190 nm and Er3+:1530 nm) emission integral intensity on different Ho3+ concentrations. (d) Double logarithmic plots of NIR-II emission intensities versus 980 nm laser power of β-NaLuF4:18%Yb3+, 5%Er3+, 2%Ho3+. (e) Energy level schematic diagram of Er3+, Ho3+, and Yb3+ ions along with the relevant transitions and energy transfers under the excitation of 980 nm.

    Figure 3.Downshifting emission spectra of (a) β-NaLuF4:18%Yb3+, 5%Er3+ and β-NaLuF4:18%Yb3+, 1.5%Ho3+ and (b) β-NaLuF4:18%Yb3+, 5%Er3+, z%Ho3+ (z=1, 2, 3, 5) under 980 nm excitation. (c) Dependence of NIR-II (Ho3+:1190  nm and Er3+:1530  nm) emission integral intensity on different Ho3+ concentrations. (d) Double logarithmic plots of NIR-II emission intensities versus 980 nm laser power of β-NaLuF4:18%Yb3+, 5%Er3+, 2%Ho3+. (e) Energy level schematic diagram of Er3+, Ho3+, and Yb3+ ions along with the relevant transitions and energy transfers under the excitation of 980 nm.

    To shed light on the luminescence mechanism, we further measured the pump-power-dependent NIR-II emission spectra of β-NaLuF4:18%Yb3+, 5%Er3+, z%Ho3+ (z=1, 3, 5) samples under 980 nm excitation (Appendix D). As displayed in Fig. 3(d), there is a linear relationship between the logarithm of excitation power and the logarithm of the emission intensity, enabling the slopes of the fitted line corresponding to the transition process of Ho3+ and Er3+. From the obtained slopes (n1), it confirmed that the NIR-II emissions originating from the I413/2I415/2 transition (1530  nm) of Er3+ and I56I58 transition (1190  nm) of Ho3+ occurred via one-photon absorption processes [Fig. 3(e)] [2628]. Interestingly, by keeping an Er3+ concentration of 5%, the slope value was slightly decreased with the increased Ho3+ doping content of 3%, indicating that a higher Ho3+ concentration could accelerate the PAET process between Er3+ and Ho3+ ions.

    For understanding the PAET process from Er3+ to Ho3+ more deeply, a series of co-doped samples β-NaLuF4:2%Ho3+, β-NaLuF4:5%Er3+, and β-NaLuF4:5%Er3+, m%Ho3+ (m=1, 2, 3, 5) was synthesized. The emission spectra of the samples under 980 nm excitation were recorded in Figs. 4(a) and 4(b). Specifically, benefitting from the self-sensitization of Er3+, dominant green emissions (centered at 525 and 545 nm), red emission (centered at 655 nm), and downshifting emission (centered at 1530 nm) were clearly observed in β-NaLuF4:5%Er3+, which are attributed to H211/2, S43/2, F49/2, and I413/2I415/2 transitions, respectively. By contrast, β-NaLuF4:2%Ho3+ exhibited no emission owing to its extremely weak absorption cross-section with the excitation energy at 980 nm. The new emission bands of Ho3+ can be observed in the co-doped Er3+ and Ho3+ samples, originating from F54, S52, F55, and I56I58 transitions, indicating the existence of energy transfer from the H211/2, S43/2 level of Er3+ to the F54, S52 level of Ho3+ as well as the PAET process from the I411/2 of Er3+ to the I56 of Ho3+. With the increase Ho3+ doping concentration from 1% to 5%, the NIR-II emission intensity of Ho3+ was gradually enhanced; meanwhile the downshifting emission intensity of Er3+ first increased and then decreased seriously, as depicted in Fig. 4(c). These results show that the back PAET process from Ho3+ to Er3+ also has a significant effect on NIR-II downshifting emission. More importantly, this was further supported by the downshifting lifetime of the I413/2 level of Er3+, which gradually decreased from 13.6 to 2.67 ms with the increasing Ho3+ contents from 1% to 5% [Figs. 4(d) and 4(e)]. Correspondingly, the experimental Er3+-to-Ho3+ energy transfer efficiency can be calculated using the following equation [29]: η=1ττ0,where τ and τ0 are the lifetime of the donor (Er3+) in the presence and absence of the accepter (Ho3+). The quantitative analysis revealed the rapid increase of energy transfer efficiency up to 80.52% for PAET pathways with increasing Ho3+ doping concentration [Fig. 4(f)], further validating that the PAET process plays a critical role in the energy mismatch system of co-doped Er3+ and Ho3+ [Fig. 4(g)].

    Emission spectra of β-NaLuF4:5%Er3+, β-NaLuF4:2%Ho3+, and β-NaLuF4:5%Er3+, m%Ho3+ (m=1, 2, 3, 5) in the range of (a) 500–700 nm and (b) 1100–1700 nm under 980 nm excitation. (c) Intensity of emissions in visible, NIR-II region with the elevated doping concentration of Ho3+. Decay curves of I413/2→I415/2 transitions of (d) β-NaLuF4:5%Er3+ and (e) β-NaLuF4:5%Er3+, m%Ho3+ (m=1, 2), respectively. (f) Calculated Er3+-to-Ho3+ ET efficiency with the elevated doping concentration of Ho3+. (g) Proposed energy transfer scheme of Er3+-Ho3+ co-doped system under 980 nm excitation.

    Figure 4.Emission spectra of β-NaLuF4:5%Er3+, β-NaLuF4:2%Ho3+, and β-NaLuF4:5%Er3+, m%Ho3+ (m=1, 2, 3, 5) in the range of (a) 500–700 nm and (b) 1100–1700 nm under 980 nm excitation. (c) Intensity of emissions in visible, NIR-II region with the elevated doping concentration of Ho3+. Decay curves of I413/2I415/2 transitions of (d) β-NaLuF4:5%Er3+ and (e) β-NaLuF4:5%Er3+, m%Ho3+ (m=1, 2), respectively. (f) Calculated Er3+-to-Ho3+ ET efficiency with the elevated doping concentration of Ho3+. (g) Proposed energy transfer scheme of Er3+-Ho3+ co-doped system under 980 nm excitation.

    As a proof of concept, we further establish a relationship between the PAET process and temperature sensing of the Er3+-Ho3+ co-doped system. Figure 5(a) illustrates the temperature-dependent emission spectra of the β-NaLuF4:18%Yb3+, 5%Er3+, 1%Ho3+ over a temperature range from 313 to 523 K under 980 nm excitation. Notably, the NIR-II emission of Ho3+ displays abnormal thermally enhanced performance along a temperature increase, reaching the 1.45-fold enhancement at 523 K, while the downshifting emission (centered at 1530 nm) of Er3+ shows serious thermal quenching [Fig. 5(b)], which could be attributed to the efficient PAET process between Er3+ and Ho3+ with the increased temperature [Fig. 5(d)]. This was further confirmed by the opposite trend of integrated emission intensities of Ho3+ (1190  nm) and Er3+ (1530  nm) emission with elevated temperature in a series of β-NaLuF4:18%Yb3+, 5%Er3+, z%Ho3+ (z=1, 2, 3, 5) hollow microtubes, which further validated that the existence of a back PAET process between Ho3+ and Er3+ ions plays a considerable role in NIR-II temperature sensing [Fig. 5(c)].

    (a) Emission spectra of β-NaLuF4:18%Yb3+, 5%Er3+, 1%Ho3+ recorded at different temperatures under 980 nm excitation. (b) The plotted emission intensity of Ho3+ and Er3+ dependent on the ambient temperature. (c) The variation trend of integrated emission intensity of Ho3+ and Er3+ at varied Ho3+ doping concentrations with the temperature range from 313 to 523 K. (d) Energy level diagram of the phonon-assisted enhanced ET processes between Er3+ and Ho3+.

    Figure 5.(a) Emission spectra of β-NaLuF4:18%Yb3+, 5%Er3+, 1%Ho3+ recorded at different temperatures under 980 nm excitation. (b) The plotted emission intensity of Ho3+ and Er3+ dependent on the ambient temperature. (c) The variation trend of integrated emission intensity of Ho3+ and Er3+ at varied Ho3+ doping concentrations with the temperature range from 313 to 523 K. (d) Energy level diagram of the phonon-assisted enhanced ET processes between Er3+ and Ho3+.

    (a) Two-dimensional NIR-II emission topographical mapping with the temperature from 313 to 523 K. (b) The acquired experimental temperature-dependent LIR data fitted with Eq. (4) using the dominant phonon energy at 497 cm−1. (c) The relative temperature sensitivity (Sr) of the investigated β-NaLuF4:18%Yb3+, 5%Er3+, z%Ho3+ (z=1, 2, 5) hollow microtubes with diverse doping contents. (d) Fluctuation of LIR values and the calculated temperature resolution δT at 313 K. (e) Repeatability of LIR over heating and cooling cycles under 980 nm excitation.

    Figure 6.(a) Two-dimensional NIR-II emission topographical mapping with the temperature from 313 to 523 K. (b) The acquired experimental temperature-dependent LIR data fitted with Eq. (4) using the dominant phonon energy at 497  cm1. (c) The relative temperature sensitivity (Sr) of the investigated β-NaLuF4:18%Yb3+, 5%Er3+, z%Ho3+ (z=1, 2, 5) hollow microtubes with diverse doping contents. (d) Fluctuation of LIR values and the calculated temperature resolution δT at 313 K. (e) Repeatability of LIR over heating and cooling cycles under 980 nm excitation.

    4. CONCLUSION

    In summary, we have proposed the phonon-based LIR thermometry in the NIR-II region through manipulating the Ho3+ luminescence in β-NaLuF4:Ho3+/Er3+/Yb3+ hollow microtubes. The MPR and PAET processes between Er3+ and Ho3+ are strongly attributed to the dominant phonon of the β-NaLuF4 host lattice, which corresponds to the strongest peak in the Raman spectrum, further achieving the definition of LIR. Meanwhile, the mechanism of anti-thermal quenching is attributed to the Er3+ as an energy trap center to facilitate the PAET process, thereby enabling a considerable energy transfer efficiency up to 80.52% between Er3+ and Ho3+ without Yb3+ ions as sensitizers. Benefiting from the thermally boosted emission (Ho3+:1190  nm, I56I58 transition) and thermally quenched emission (Er3+:1530  nm, I413/2I415/2 transition), the phonon-based NIR-II ratiometric thermometers readily rendered superior sensitivity and resolution (Sr=0.57%  K1, δT=0.77  K). The present work expands a fascinating perspective for overcoming the thermal quenching of NIR-II luminescence, and holds enormous potential for high-performance optical temperature sensing.

    Acknowledgment

    Acknowledgment. The authors would like to acknowledge the Instrument and Equipment Sharing Platform, College of Physics (Jilin University), for testing assistance.

    APPENDICES

    Appendices AD below are for the details of the phonon energy of the host, luminescence property of β-NaLuF4:Yb3+, Er3+ hollow microtubes, luminescence property of different doping strategies, and analysis of the absorbed photon number.

    APPENDIX A: PHONON ENERGY OF THE HOST

    Given the significant influence of host crystalline phonon energy on NIR-II emission efficiency, FT-IR spectra emerge as a valuable tool for investigating material phonon modes (Fig. 7).

    Fourier transform infrared spectrum of the β-NaLuF4.

    Figure 7.Fourier transform infrared spectrum of the β-NaLuF4.

    APPENDIX B: LUMINESCENCE PROPERTY OF β-NaLuF4:Yb3+, Er3+ HOLLOW MICROTUBES

    The optimal doping concentration of Er3+ in the NIR-II region is 5%, while it remains at 1% for visible emissions in β-NaLuF4:Yb3+, Er3+ samples, which can be attributed to the accelerated cross relaxation process, promoting the population of a lower excited state level with increased Er3+ doping concentration for enhanced downshifting emission (Fig. 8).

    (a) Up-conversion emission spectra and (b) NIR-II emission spectra of β-NaLuF4:18%Yb3+, x%Er3+ (x=1, 2, 3, 5, 7) hollow microtubes under 980 nm excitation. (c) Schematic illustration of energy level diagram of different Er3+ concentrations.

    Figure 8.(a) Up-conversion emission spectra and (b) NIR-II emission spectra of β-NaLuF4:18%Yb3+, x%Er3+ (x=1, 2, 3, 5, 7) hollow microtubes under 980 nm excitation. (c) Schematic illustration of energy level diagram of different Er3+ concentrations.

    APPENDIX C: LUMINESCENCE PROPERTY OF DIFFERENT DOPING STRATEGIES

    More importantly, elaborately selecting a doping strategy including the Yb3+/Er3+/Tm3+ and Yb3+/Ho3+/Tm3+ system in β-NaLuF4 simultaneously enables the outstanding NIR-II emissions, which far exceeds the reported NIR-II emitting materials (Fig. 9).

    NIR-II emission spectra of (a) β-NaLuF4:18%Yb3+, 0.4%Ho3+, 0.2%Tm3+ and (b) β-NaLuF4:18%Yb3+, 0.2%Er3+, 0.2%Tm3+ hollow microtubes under 980 nm excitation.

    Figure 9.NIR-II emission spectra of (a) β-NaLuF4:18%Yb3+, 0.4%Ho3+, 0.2%Tm3+ and (b) β-NaLuF4:18%Yb3+, 0.2%Er3+, 0.2%Tm3+ hollow microtubes under 980 nm excitation.

    APPENDIX D: ANALYSIS OF ABSORBED PHOTON NUMBER

    To shed light on the luminescence mechanism, we further measured the pump-power-dependent NIR-II emission spectra of β-NaLuF4:18%Yb3+, 5%Er3+, z%Ho3+ (z=1, 3, 5) samples under 980 nm excitation (Fig. 10).

    The downshifting emission spectra of (a) β-NaLuF4:18%Yb3+, 5%Er3+, 1%Ho3+, (b) β-NaLuF4:18%Yb3+, 5%Er3+, 3%Ho3+, and (c) β-NaLuF4:18%Yb3+, 5%Er3+, 5%Ho3+ samples excited at different pump powers. (d)–(f) Corresponding to the double-logarithmic plots of emission intensity versus pump power under 980 nm excitation.

    Figure 10.The downshifting emission spectra of (a) β-NaLuF4:18%Yb3+, 5%Er3+, 1%Ho3+, (b) β-NaLuF4:18%Yb3+, 5%Er3+, 3%Ho3+, and (c) β-NaLuF4:18%Yb3+, 5%Er3+, 5%Ho3+ samples excited at different pump powers. (d)–(f) Corresponding to the double-logarithmic plots of emission intensity versus pump power under 980 nm excitation.

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    Mengmeng Dai, Zhiying Wang, Kejie Li, Jiaqi Zhao, Zuoling Fu, "Erbium as an energy trap center for manipulating NIR-II luminescence of Ho3+ in fluoride towards phonon-based ratiometric thermometry," Photonics Res. 13, 1249 (2025)
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