[1] L CHUA. Memristor-the missing circuit element. IEEE Trans. Circuit Theory, 507(1971).

[2] D B STRUKOV, G S SNIDER, D R STEWART et al. The missing memristor found. Nature, 80(2008).

[3] J KANG, T KIM, S HU et al. Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing. Nat. Commun., 4040(2022).

[4] T CHANG, S H JO, W LU. Short-term memory to long-term memory transition in a nanoscale memristor. ACS Nano, 7669(2011).

[5] S H JO, T CHANG, I EBONG et al. Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett., 1297(2010).

[6] C D WRIGHT, L WANG, M M AZIZ et al. Phase-change processors, memristors and memflectors. Phys. Status Solidi B, 1978(2012).

[7] M YOSHIDA, R SUZUKI, Y ZHANG et al. Memristive phase switching in two-dimensional 1T-TaS₂ crystals. Sci Adv.(2015).

[8] R C SOUSA, I L PREJBEANU. Non-volatile magnetic random access memories (MRAM). Comptes Rendus Physique, 1013(2005).

[9] M C SHIH, C Y WANG, Y H LEE et al. Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260 ℃. 2016 IEEE Symposium on VLSI Technology, Honolulu, 2(2016).

[10] A MANCHON, J ŽELEZNÝ, I M MIRON. Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems. Rev. Mod. Phys., 035004(2019).

[11] Y T HUANG, N K CHEN, Z Z LI et al. Two-dimensional In₂Se₃: a rising advanced material for ferroelectric data storage. InfoMat, e12341(2022).

[12] N SETTER, D DAMJANOVIC, L M ENG et al. Ferroelectric thin films: review of materials, properties and applications. J. Appl. Phys., 051606(2006).

[13] Q A VU, H KIM, V L NGUYEN et al. A high-on/off-ratio floating-gate memristor array on a flexible substrate via CVD-grown large-area 2D layer stacking. Adv. Mater.(2017).

[14] X GUO, Q WANG, X LÜ et al. SiO₂/Ta₂O₅ heterojunction ECM memristors: physical nature of their low voltage operation with high stability and uniformity. Nanoscale, 4320(2020).

[15] M ISMAIL, H ABBAS, C CHOI et al. Stabilized and reset-voltage controlled multi-level switching characteristics in ZrO₂-based memristors by inserting a-ZTO interface layer. J. Alloys Compd., 155256(2020).

[16] N ANDREEVA, D MAZING, A ROMANOV et al. Contact engineering approach to improve the linearity of multilevel memristive devices. Micromachines, 1567(2021).

[17] M ISMAIL, H ABBAS, C MAHATA et al. Optimizing the thickness of Ta₂O₅ interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO₂ switching layer for multilevel data storage. J. Mater. Sci. Technol., 98(2022).

[18] Y L ZHU, K H XUE, X M CHENG et al. Uniform and robust TiN/HfO₂/Pt memristor through interfacial Al-doping engineering. Appl. Surf. Sci., 149274(2021).

[19] C SU, L SHAN, D YANG et al. Effects of heavy ion irradiation on Cu/Al₂O₃/Pt CBRAM devices. Microelectronic Eng., 111600(2021).

[20] M C WU, Y H TING, J Y CHEN et al. Low power consumption nanofilamentary ECM and VCM cells in a single sidewall of high-density VRRAM arrays. Adv. Sci.(2019).

[21] S RAJASEKARAN, F M SIMANJUNTAK, S CHANDRASEKARAN et al. Flexible Ta₂O₅/WO₃-based memristor synapse for wearable and neuromorphic applications. IEEE Electron Device Lett., 9(2021).

[22] M ISMAIL, H ABBAS, A SOKOLOV et al. Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta₂O₅ embedded layer for neuromorphic computing. Ceram. Int., 30764(2021).

[23] J LIU, H YANG, Y JI et al. An electronic synaptic device based on HfO₂TiO_x bilayer structure memristor with self-compliance and deep-RESET characteristics. Nanotechnology, 415205(2018).

[24] Q XIA, J J YANG. Memristive crossbar arrays for brain-inspired computing. Nat. Mater., 309(2019).

[25] Y C CHEN, C C LIN, Y F CHANG. Post-moore memory technology: sneak path current (SPC) phenomena on RRAM crossbar array and solutions. Micromachines, 50(2021).

[26] S G REN, R NI, X D HUANG et al. Pt/Al₂O₃/TaO_x/Ta self-rectifying memristor with record-low operation current (<2 pA), low power (fJ), and high scalability. IEEE Trans. Electron Devices, 838(2022).

[27] Y XI, B GAO, J TANG et al. In-memory learning with analog resistive switching memory: a review and perspective. Proceedings of the IEEE, 14(2021).

[28] P Y CHEN, X PENG, S YU. NeuroSim+: an integrated device-to-algorithm framework for benchmarking synaptic devices and array architectures. 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco(2017).

[29] P Y CHEN, S YU. Technological benchmark of analog synaptic devices for neuroinspired architectures. IEEE Des. Test, 31(2019).

[30] J WOO, K MOON, J SONG et al. Improved synaptic behavior under identical pulses using AlO_x/HfO₂ bilayer RRAM array for neuromorphic systems. IEEE Electron Device Lett., 994(2016).

[32] J J YANG, F MIAO, M D PICKETT et al. The mechanism of electroforming of metal oxide memristive switches. Nanotechnology, 215201(2009).

[33] G Q MAO, K H XUE, Y Q SONG et al. Oxygen migration around the filament region in HfO_xmemristors. AIP Advances, 105007(2019).

[34] Y YANG, W LU. Nanoscale resistive switching devices: mechanisms and modeling. Nanoscale, 10076(2013).

[35] Z ZHANG, D YANG, H LI et al. 2D materials and van der Waals heterojunctions for neuromorphic computing. Neuromorph. Comput. Eng., 032004(2022).

[36] U CELANO, L GOUX, A BELMONTE et al. Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices. Nano Lett., 2401(2014).

[37] Y YANG, P GAO, S GABA et al. Observation of conducting filament growth in nanoscale resistive memories. Nat. Commun., 732(2012).

[38] C LI, B GAO, Y YAO et al. Direct observations of nanofilament evolution in switching processes in HfO₂ based resistive random access memory by in situ TEM studies. Adv. Mater.(2017).

[39] F MIAO, J P STRACHAN, J J YANG et al. Anatomy of a nanoscale conduction channel reveals the mechanism of a high performance memristor. Adv. Mater., 5633(2011).

[41] S DESHMUKH, M M ROJO, E YALON et al. Direct measurement of nanoscale filamentary hot spots in resistive memory devices. Sci. Adv.(2022).

[42] J P STRACHAN, D B STRUKOV, J BORGHETTI et al. The switching location of a bipolar memristor: chemical, thermal and structural mapping. Nanotechnology, 254015(2011).

[43] F WU, S SI, P CAO et al. Interface engineering via MoS₂insertion layer for improving resistive switching of conductive bridging random access memory. Adv. Electron. Mater.(2019).

[44] Y Y CHEN, R ROELOFS, A REDOLFI et al. Tailoring switching and endurance/retention reliability characteristics of HfO₂/Hf RRAM with Ti, Al, Si dopants. 2014 Symposium on VLSI Technology: Digest of Technical Papers, Honolulu(2014).

[45] B WANG, K H XUE, H J SUN et al. Performance enhancement of TaO_x resistive switching memory using graded oxygen content. Appl. Phys. Lett., 183501(2018).

[46] C D LANDON, R H T WILKE, M T BRUMBACH et al. Thermal transport in tantalum oxide films for memristive applications. Appl. Phys. Lett., 023108(2015).

[47] X D HUANG, Y LI, H Y LI et al. Enhancement of DC/AC resistive switching performance in AlO_x memristor by two technique bilayer approach. Appl. Phys. Lett., 173504(2020).

[48] Q DUAN, L XU, J ZHU et al. Resistive switching and synaptic plasticity in HfO₂-based memristors with single-layer and bilayer structures. 2018 China Semiconductor Technology International Conference (CSTIC), Shanghai(2018).

[49] X D HUANG, Y LI, H Y LI et al. Forming-free, fast, uniform, and high endurance resistive switching from cryogenic to high temperatures in W/AlO_x/Al₂O₃/Pt bilayer memristor. IEEE Electron Device Lett., 549(2020).

[50] X D HUANG, Y LI, H Y LI et al. Low-power, high speed and high uniform switching in AlOx-based memristor using homogeneous bilayer structure for memcomputing. 2019 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), Chengdu(2019).

[51] S CHOI, P SHERIDAN, W D LU. Data clustering using memristor networks. Sci. Rep., 10492(2015).

[52] X WANG, W LIAO, T RAO et al. Resistive switching in sputtered ZnO/IGZO heterostructure memristor. 2022 IEEE 5th International Conference on Electronics Technology (ICET), Chengdu(2022).

[53] Z XU, L YU, X XU et al. Effect of oxide/oxide interface on polarity dependent resistive switching behavior in ZnO/ZrO₂ heterostructures. Appl. Phys. Lett., 192903(2014).

[54] J ZHU, J W LEE, H LEE et al. Probing vacancy behavior across complex oxide heterointerfaces. Sci. Adv.(2019).

[55] S CHANDRASEKARAN, F M SIMANJUNTAK, R SAMINATHAN et al. Improving linearity by introducing Al in HfO₂ as a memristor synapse device. Nanotechnology, 445205(2019).

[56] Z ZHANG, Y CAI, M YU et al. A tantalum oxide memristor for artificial synapse applications. 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Guilin(2014).

[57] A MIKHAYLOV, A BELOV, D KOROLEV et al. Multilayer metal-oxide memristive device with stabilized resistive switching. Adv. Mater. Technol.(2020).

[58] P BOUSOULAS, D SAKELLAROPOULOS, D TSOUKALAS et al. Tuning the analog synaptic properties of forming free SiO₂ memristors by material engineering. Appl. Phys. Lett., 143502(2021).

[59] H KIM, M R MAHMOODI, H NILI et al. 4K-memristor analog-grade passive crossbar circuit. Nat. Commun., 5198(2021).

[60] F WU, P CAO, Z PENG et al. Memristor based on TiO_x/Al₂O₃ bilayer as flexible artificial synapse for neuromorphic electronics. IEEE Trans. Electron Device, 375(2021).

[61] Y ZHONG, J TANG, X LI et al. Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing. Nat. Commun., 408(2021).

[62] S CHOI, S JANG, J H MOON et al. A self-rectifying TaO_y/ nanoporous TaO_x memristor synaptic array for learning and energy-efficient neuromorphic systems. NPG Asia Mater., 1097(2018).

[63] H J KIM, T H PARK, K J YOON et al. Fabrication of a Cu-cone-shaped cation source inserted conductive bridge random access memory and its improved switching reliability. Adv. Funct. Mater.(2019).

[64] H J KIM, J KIM, T G PARK et al. Multi-level control of conductive filament evolution and enhanced resistance controllability of the Cu-cone structure embedded conductive bridge random access memory. Adv. Electron. Mater.(2022).