Double Dielectric Layer Metal-oxide Memristor: Design and Applications

Junqi YOU; Ce LI; Dongliang YANG; Linfeng SUN

doi:10.15541/jim20220760

Journals >Journal of Inorganic Materials >Volume 38 >Issue 4 >Page 387 > Article

Journal of Inorganic Materials
Vol. 38, Issue 4, 387 (2023)

Double Dielectric Layer Metal-oxide Memristor: Design and Applications

Junqi YOU¹, Ce LI¹, Dongliang YANG¹, and Linfeng SUN^1、2、*

Author Affiliations

¹1. MOE Key Laboratory of Advanced Optoetectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing 100081, China

²2. Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China

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DOI: 10.15541/jim20220760 Cite this Article

Junqi YOU, Ce LI, Dongliang YANG, Linfeng SUN. Double Dielectric Layer Metal-oxide Memristor: Design and Applications[J]. Journal of Inorganic Materials, 2023, 38(4): 387 Copy Citation Text

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1. Comparison of the structure and performance between the single/double dielectric layer metal-oxide memristor

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2. Advantages of the double dielectric layer metal-oxide memristor in building neural network

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3. Mechanism and characteristic of the double dielectric layer metal-oxide memristor based on the localization effect of electric field^[14]

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4. Two mechanisms and characteristics comparison of the double dielectric layer metal-oxide memristor based on oxygen vacancy gradient

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5. Mechanism and performance of the double dielectric layer metal-oxide memristor based on Joule heating effect^[57]

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6. Mechanism of the double dielectric layer metal-oxide memristor with the linear symmetrical pulse response^[58]

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7. Data set classification using memristor based on double dielectric layer metal-oxide^[51]

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8. Demonstration of speech recognition using double dielectric layer metal-oxide memristor^[61]

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9. Demonstration of image recognition using double dielectric layer metal-oxide memristor

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Memristor structure		Range of Set voltage, ΔV_Set/V	Range of Reset voltage, ΔV_Reset/V	Endurance	On/Off ratio	Retention/s	Ref.
Single dielectric layer	Ta/ZrO₂/TiN	-1.0 ~-1.6(0.6)	0.8 ~ 1.5(0.7)	100	10²	-	[15]
	Cu/Al₂O₃/Pt	0.4 ~ 1.2(0.8)	-0.1 ~-0.8(0.7)	2×10³	10⁵	10⁵	[19]
	Ag/ZnO/Pt	0.3 ~ 1.0(0.7)	-0.4 ~-0.8(0.4)	10²	50	10⁴	[20]
	TaN/Ta₂O₅/Pt	2.0 ~ 4.5(2.5)	-2.5 ~-4.5(2)	10⁴	-	10⁴	[21]
	Ta/ZrO₂/Pt	0.4 ~ 2.0(1.6)	-0.4 ~-1.0(0.6)	100	-	-	[22]
Double dielectric layer	Ag/SiO₂/Ta₂O₅/Pt	0.14 ~ 0.24(0.1)	-0.06 ~-0.14(0.08)	10³	10³	10⁴	[14]
	Ta/ZrO₂/ZTO/TiN	-0.8 ~-1.2(0.4)	0.8 ~ 1.2(0.4)	10⁵	10²	3×10³	[15]
	Ta/Ta₂O₅/ZrO₂/Pt	0.7 ~ 1.2(0.5)	-0.5 ~-0.8(0.3)	10⁶	10²	10⁴	[17]
	TaN/Ta₂O₅/WO₃/Pt	1.6 ~ 2.3(0.7)	-1.9 ~-2.5(0.6)	10⁹	-	10⁶	[21]
	Ti/HfO₂/TiO_x/Pt	-0.8 ~-1.1(0.3)	1.4 ~ 1.5(0.1)	10⁷	10³	10⁵	[23]

Table 1. Performance comparison of the single/double dielectric layer metal-oxide memristors

Junqi YOU, Ce LI, Dongliang YANG, Linfeng SUN. Double Dielectric Layer Metal-oxide Memristor: Design and Applications[J]. Journal of Inorganic Materials, 2023, 38(4): 387

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